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DLPA2000 Datasheet(PDF) 9 Page - Texas Instruments |
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DLPA2000 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 41 page ![]() 9 DLP2010 www.ti.com DLPS046B – JULY 2014 – REVISED JULY 2016 Product Folder Links: DLP2010 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated (1) The DMD is designed to conduct absorbed and dissipated heat to the back of the package. The cooling system must be capable of maintaining the package within the temperature range specified in the Recommended Operating Conditions. The total heat load on the DMD is largely driven by the incident light absorbed by the active area; although other contributions include light energy absorbed by the window aperture and electrical power dissipation of the array. Optical systems should be designed to minimize the light energy falling outside the window clear aperture since any additional thermal load in this area can significantly degrade the reliability of the device. 6.5 Thermal Information THERMAL METRIC(1) DLP2010 UNIT FQJ (CLGA) 40 PINS Thermal resistance Active area to test point 1 (TP1)(1) 7.9 °C/W (1) Device electrical characteristics are over Recommended Operating Conditions unless otherwise noted. (2) All voltage values are with respect to the ground pins (VSS). (3) To prevent excess current, the supply voltage delta |VDDI – VDD| must be less than specified limit. (4) Supply power dissipation based on non–compressed commands and data. (5) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. (6) Supply power dissipation based on 3 global resets in 200 µs. (7) The following power supplies are all required to operate the DMD: VSS, VDD, VDDI, VOFFSET, VBIAS, VRESET. (8) LPSDR specifications are for pins LS_CLK and LS_WDATA. (9) Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B, Low-Power Double Data Rate (LPDDR) JESD209B. 6.6 Electrical Characteristics Over operating free-air temperature range (unless otherwise noted) (1) PARAMETER TEST CONDITIONS(2) MIN TYP MAX UNIT CURRENT IDD Supply current: VDD(3)(4) VDD = 1.95 V 34.7 mA VDD = 1.8 V 27.5 IDDI Supply current: VDDI(3)(4) VDDI = 1.95 V 9.4 mA VDD = 1.8 V 6.6 IOFFSET Supply current: VOFFSET(5)(6) VOFFSET = 10.5 V 1.7 mA VOFFSET = 10 V 0.9 IBIAS Supply current: VBIAS(5)(6) VBIAS = 18.5 V 0.4 mA VBIAS = 18 V 0.2 IRESET Supply current: VRESET(6) VRESET = –14.5 V 2 mA VRESET = –14 V 1.2 POWER(7) PDD Supply power dissipation: VDD(3)(4) VDD = 1.95 V 67.7 mW VDD = 1.8 V 49.5 PDDI Supply power dissipation: VDDI(3)(4) VDDI = 1.95 V 18.3 mW VDD = 1.8 V 11.9 POFFSET Supply power dissipation: VOFFSET(5)(6) VOFFSET = 10.5 V 17.9 mW VOFFSET = 10 V 9 PBIAS Supply power dissipation: VBIAS (5)(6) VBIAS = 18.5 V 7.4 mW VBIAS = 18 V 3.6 PRESET Supply power dissipation: VRESET(6) VRESET = –14.5 V 29 mW VRESET = –14 V 16.8 PTOTAL Supply power dissipation: Total 90.8 140.3 mW LPSDR INPUT(8) VIH(DC) DC input high voltage(9) 0.7 × VDD VDD + 0.3 V VIL(DC) DC input low voltage(9) –0.3 0.3 × VDD V VIH(AC) AC input high voltage(9) 0.8 × VDD VDD + 0.3 V VIL(AC) AC input low voltage(9) –0.3 0.2 × VDD V ∆VT Hysteresis ( VT+ – VT– ) Figure 10 0.1 × VDD 0.4 × VDD V |
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