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AR0135CS Datasheet(PDF) 13 Page - ON Semiconductor

Part # AR0135CS
Description  1/3?릋nch 1.2 Mp CMOS Digital Image Sensor
PDF  27 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

AR0135CS Datasheet(HTML) 13 Page - ON Semiconductor

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AR0135CS
www.onsemi.com
13
ELECTRICAL SPECIFICATIONS
Unless otherwise stated, the following specifications
apply to the following conditions:
VDD = 1.8 V –0.10/+0.15; VDD_IO = VDD_PLL = VAA =
VAA_PIX = 2.8 V
±0.30;
VDD_SLVS = 0.4 V –0.1/+0.2; TA = −30
°C to +70°C; output
load = 10 pF;
PIXCLK frequency = 74.25 MHz; HiSPi off.
Two-Wire Serial Register Interface
The electrical characteristics of the two-wire serial
register interface (SCLK, SDATA) are shown in Figure 14 and
Table 4.
Figure 14. Two-Wire Serial Bus Timing Parameters
SDATA
SCLK
S
Sr
P
S
tf
tr
tf
tr
tSU;DAT
tHD;STA
tSU;STO
tSU;STA
tBUF
tHD;DAT
tHIGH
tLOW
tHD;STA
NOTE:
Read sequence: For an 8-bit READ, read waveforms start after WRITE command and register address are issued.
Table 4. TWO-WIRE SERIAL BUS CHARACTERISTICS
(fEXTCLK = 27 MHz; VDD = 1.8 V; VDD_IO = 2.8 V; VAA = 2.8 V; VAA_PIX = 2.8 V; VDD_PLL = 2.8 V; VDD_DAC = 2.8 V; TA = 25°C)
Parameter
Symbol
Standard Mode
Fast-Mode
Unit
Min
Max
Min
Max
SCLK Clock Frequency
tSCL
0
100
0
400
kHz
Hold Time (Repeated) START
Condition
After this Period, the First Clock
Pulse is Generated
tHD;STA
4.0
0.6
ms
LOW Period of the SCLK Clock
tLOW
4.7
1.3
ms
HIGH Period of the SCLK Clock
tHIGH
4.0
0.6
ms
Set-up Time for a Repeated
START Condition
tSU;STA
4.7
0.6
ms
Data Hold Time
tHD;DAT
0 (Note 4)
3.45 (Note 5)
0 (Note 6)
0.9 (Note 5)
ms
Data Set-up Time
tSU;DAT
250
100 (Note 6)
ns
Rise Time of both SDATA and
SCLK Signals
tr
1000
20 + 0.1Cb
(Note 7)
300
ns
Fall Time of both SDATA and SCLK
Signals
tf
300
20 + 0.1Cb
(Note 7)
300
ns
Set-up Time for STOP Condition
tSU;STO
4.0
0.6
ms
Bus Free Time between a STOP
and START Condition
tBUF
4.7
1.3
ms
Capacitive Load for each Bus Line
Cb
400
400
pF
Serial Interface Input Pin
Capacitance
CIN_SI
3.3
3.3
pF



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