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HAL855 Datasheet(PDF) 22 Page - Micronas |
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HAL855 Datasheet(HTML) 22 Page - Micronas |
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22 / 102 page ![]() HAL8xy, HAL100x APPLICATION NOTE Programmer Board 22 Sept. 19, 2013; APN000046_03EN Micronas Fig. 4–1: Definition of logical 0 and 1 bit tr tf tp0 tp0 logical 0 VDDH VDDL or tp0 logical 1 VDDH VDDL or tp0 tp1 tp1 Table 4–3: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit Remarks VDDL Supply voltage for low level during programming 155.6 6V VDDH Supply voltage for high level during programming 1 6.8 8.0 8.5 V tr Rise time 1 0.05 ms tf Fall time 1 0.05 ms tp0 Bit time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync bit tpOUT Bit time on output pin 3234ms tpOUT is defined through the Acknowl- edge bit tp1 Voltage change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT VDDPROG Supply voltage for programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming time for EEPROM 1 95 100 105 ms trp Rise time of programming voltage 1 0.2 0.5 1 ms tfp Fall time of programming voltage 1 0 1 ms tw Delay time of programming voltage after Acknowledge 10.5 0.7 1ms Vact Voltage for an Activate pulse 3345V tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms |
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