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AMT49413 Datasheet(PDF) 4 Page - Allegro MicroSystems

Part # AMT49413
Description  3-Phase BLDC Controller and MOSFET Driver
PDF  21 Pages
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Manufacturer  ALLEGRO [Allegro MicroSystems]
Direct Link  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

AMT49413 Datasheet(HTML) 4 Page - Allegro MicroSystems

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3-Phase BLDC Controller and MOSFET Driver
AMT49413
4
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
ELECTRICAL CHARACTERISTICS: Valid at TA = 25°C, VBB = 7 to 45 V, unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
SUPPLY AND REFERENCE
VBB Functional Operating Range1
VBB
Function correct, parameters not
guaranteed
5.5
–
50
V
VBB Quiescent Current
IBBQ
RESET = High, outputs = Low
–
11
14
mA
IBBS
RESET = Low, sleep mode
–
–
10
µA
V5 Quiescent Current
IV5Q
RESET = High, outputs = Low
–
–
5
mA
VREG Output Voltage
VREG
VBB ≥ 7.4 V, IREG = 0 to 15 mA
12.10
13
13.75
V
6 V < VBB < 7.4 V
IREG = 0 to 15 mA
2×VBB
–2.7
–
–
V
5.5 V < VBB < 6 V, IREG < 10 mA
9
10
–
V
Bootstrap Diode Forward Voltage
VfBOOT
ID = 10 mA
0.4
0.7
1.0
V
ID = 100 mA
1.5
2.2
2.8
V
Bootstrap Diode Resistance
rD
rD(100 mA)=(VfBOOT(150 mA)–
VfBOOT(50mA)) /100 mA
6
10
20
Ω
Bootstrap Diode Current Limit
IDBOOT
250
500
750
mA
Top-Off Charge Pump Current Limit
ITOCPM
–
200
–
µA
High-Side Gate Drive Static Load Resistance
RGSH
250
–
–
kΩ
V5 Output Voltage
V5
4.75
5
5.25
V
VBE of External Transistor QV5
VBEEXT
–
–
1
V
V5BD Base Drive Capability for QV52
I5BD
–
–
–2
mA
GATE OUTPUT DRIVE
Turn-On Rise Time
tr
CLOAD = 3300 pF, 20% to 80% points
–
60
–
ns
Turn-Off Fall Time
tf
CLOAD = 3300 pF, 80% to 20% points
–
40
–
ns
Pull-Up On Resistance
RDS(on)UP
IGHx= –150 mA
3
4
5
Ω
Pull-Down On Resistance
RDS(on)DN
IGLx=150 mA
1
1.5
2
Ω
Short-Circuit Current – Source2
ISC(source)
–
–500
–
mA
Short-Circuit Current – Sink
ISC(sink)
–
850
–
mA
GHx Output Voltage
VGHx
tw < 10 µs
Bootstrap capacitor fully charged
VCx– 0.2
–
–
V
GLx Output Voltage
VGLx
VREG–0.2
–
–
V
Turn-Off Propagation Delay
tp(off)
From Hall input change to unloaded gate
output change
300
500
700
ns
From other control input change to
unloaded gate output change
–
150
200
ns
Dead Time (turn-off to turn-on delay)
tDEAD
RDEAD = 5 kΩ
–
180
–
ns
RDEAD = 50 kΩ
835
960
1090
ns
RDEAD = 400 kΩ
–
3.3
–
µs
RDEAD = tied to V5
–
6
–
µs
Continued on the next page...



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