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AMT49413 Datasheet(PDF) 8 Page - Allegro MicroSystems

Part # AMT49413
Description  3-Phase BLDC Controller and MOSFET Driver
PDF  21 Pages
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Manufacturer  ALLEGRO [Allegro MicroSystems]
Direct Link  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

AMT49413 Datasheet(HTML) 8 Page - Allegro MicroSystems

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3-Phase BLDC Controller and MOSFET Driver
AMT49413
8
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
switching. The charge and discharge rate can be controlled using
external resistors in series with the connections to the gate of the
FETs.
RDEAD. Cross-conduction is prevented by the gate drive circuits
which introduce a dead time, tDEAD, between switching one FET
off and the complementary FET on. The dead time is derived
from the value of a resistor, RDEAD, connected between the
RDEAD pin and AGND. If RDEAD is connected to V5, tDEAD
defaults to 6 µs typical.
GLA, GLB, and GLC. Low-side gate drive outputs for external
NMOS drivers. External series-gate resistors, RGATE, (as close
as possible to the NMOS gate) can be used to control the slew
rate seen at the power-driver gate, thereby controlling the di/dt
and dv/dt of the Sx outputs. Referring to Table 2, GLx = 1 (high)
means that the upper half (PMOS) of the driver is turned on, and
that its drain will source current to the gate of the low-side FET
in the external motor-driving bridge. GLx = 0 (low) means that
the lower half (NMOS) of the driver is turned on, and that its
drain will sink current from the corresponding external FET gate
circuit to the LSS pin.
SA, SB, and SC. Directly connected to the motor, these termi-
nals sense the voltages switched across the load. These terminals
are also connected to the negative side of the bootstrap capacitors
and are the negative supply connections for the floating high-
side drivers. The discharge current from the high-side FET gate
capacitance flows through these connections, which should have
low-impedance traces to the FET bridge.
GHA, GHB, and GHC.High-sidegatedriveoutputsforexter-
nal NMOS drivers. External series-gate resistors, RGATE, can
be used to control the slew rate seen at the power-driver gate,
thereby controlling the di/dt and dv/dt of the Sx inputs. Referring
to Table 2, GHx = 1 (high) means that the upper half (PMOS) of
the driver is turned on, and that its drain will source current to the
gate of the high-side FET in the external motor-driving bridge.
GHx = 0 (low) means that the lower half (NMOS) of the driver
is turned on, and that its drain will sink current from the corre-
sponding external FET gate circuit to the respective Sx pin.
CA, CB, and CC.High-sideconnectionsforthebootstrap
capacitors and positive supply for high-side gate drivers. The
bootstrap capacitors, CBOOTx, are charged to approximately
VREG when the corresponding Sx terminal is low. When the Sx
output swings high, the voltage on the Cx pin rises with the out-
put to provide the boosted gate voltage needed for the high-side
N-channel power MOSFETs.
VDRAIN.High-impedancesenseinput(Kelvinconnection)to
the top of the external FET bridge. This input allows accurate
measurement of the voltage at the drain of the high-side FETs and
should be connected directly to the bridge, close to the drain con-
nections of the high-side FETs, with an independent trace.
LSS. Low-side return path for discharge of the gate capacitors.
It is connected to the common sources of the low-side external
FETs through an independent low-impedance trace.
Logic Control Inputs
Additional logic-level inputs are provided to enable specific
features described below. These logic inputs all have a nominal
hysteresis of 500 mV to improve noise performance.
RESET. Allows minimum current consumption from the VBB
supply. When RESET is low, all internal circuitry is disabled
including the V5 output. When coming out of sleep state, the
protection logic ensures that the gate drive outputs are off until
the charge pump reaches proper operating conditions. The charge
pump stabilizes in approximately 3 ms under nominal conditions.
RESEThasaninternalpull-downresistor,50kΩtypical.How-
ever, to allow the AMT49413 to start-up without the need for an
external logic input, the RESET pin can be pulled to the battery
voltage with an external pull-up resistor. Because RESET also has
an internal clamp diode, 6 V typical, to limit the input current, the
valueoftheexternalpull-upresistorshouldbegreaterthan20kΩ.
The upper limit for the resistor must be low enough to ensure that
the input voltage reaches the input high threshold, VINR.
COAST. An active-low input which turns all FETs off without
disabling the supplies or control logic. This allows the external
FETs and the motor to be protected in case of a short circuit.
MODE. Sets the current-decay method. Referring to Table 3,
when in slow-decay mode, MODE = 1, only the high-side MOS-
FET is switched off during a PWM-off cycle. In the fast-decay
mode, MODE = 0, the device switches both the high-side and
low-side MOSFETs.
Slow decay allows a lower ripple current in the motor at the
PWM frequency, but reduces the dynamic response of the cur-
rent control. It is suitable for motors which run at a more-or-less
constant speed. Fast decay provides improved current-control
dynamic response, but increases the motor current ripple. It is
suitable for motors used in start-stop and positioning applications.
DIR. Determines the direction of motor torque output, as shown
in Table 2. For an unloaded, low-inertia motor, this will also usu-



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