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AMT49413 Datasheet(PDF) 8 Page - Allegro MicroSystems |
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AMT49413 Datasheet(HTML) 8 Page - Allegro MicroSystems |
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8 / 21 page ![]() 3-Phase BLDC Controller and MOSFET Driver AMT49413 8 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com switching. The charge and discharge rate can be controlled using external resistors in series with the connections to the gate of the FETs. RDEAD. Cross-conduction is prevented by the gate drive circuits which introduce a dead time, tDEAD, between switching one FET off and the complementary FET on. The dead time is derived from the value of a resistor, RDEAD, connected between the RDEAD pin and AGND. If RDEAD is connected to V5, tDEAD defaults to 6 µs typical. GLA, GLB, and GLC. Low-side gate drive outputs for external NMOS drivers. External series-gate resistors, RGATE, (as close as possible to the NMOS gate) can be used to control the slew rate seen at the power-driver gate, thereby controlling the di/dt and dv/dt of the Sx outputs. Referring to Table 2, GLx = 1 (high) means that the upper half (PMOS) of the driver is turned on, and that its drain will source current to the gate of the low-side FET in the external motor-driving bridge. GLx = 0 (low) means that the lower half (NMOS) of the driver is turned on, and that its drain will sink current from the corresponding external FET gate circuit to the LSS pin. SA, SB, and SC. Directly connected to the motor, these termi- nals sense the voltages switched across the load. These terminals are also connected to the negative side of the bootstrap capacitors and are the negative supply connections for the floating high- side drivers. The discharge current from the high-side FET gate capacitance flows through these connections, which should have low-impedance traces to the FET bridge. GHA, GHB, and GHC.High-sidegatedriveoutputsforexter- nal NMOS drivers. External series-gate resistors, RGATE, can be used to control the slew rate seen at the power-driver gate, thereby controlling the di/dt and dv/dt of the Sx inputs. Referring to Table 2, GHx = 1 (high) means that the upper half (PMOS) of the driver is turned on, and that its drain will source current to the gate of the high-side FET in the external motor-driving bridge. GHx = 0 (low) means that the lower half (NMOS) of the driver is turned on, and that its drain will sink current from the corre- sponding external FET gate circuit to the respective Sx pin. CA, CB, and CC.High-sideconnectionsforthebootstrap capacitors and positive supply for high-side gate drivers. The bootstrap capacitors, CBOOTx, are charged to approximately VREG when the corresponding Sx terminal is low. When the Sx output swings high, the voltage on the Cx pin rises with the out- put to provide the boosted gate voltage needed for the high-side N-channel power MOSFETs. VDRAIN.High-impedancesenseinput(Kelvinconnection)to the top of the external FET bridge. This input allows accurate measurement of the voltage at the drain of the high-side FETs and should be connected directly to the bridge, close to the drain con- nections of the high-side FETs, with an independent trace. LSS. Low-side return path for discharge of the gate capacitors. It is connected to the common sources of the low-side external FETs through an independent low-impedance trace. Logic Control Inputs Additional logic-level inputs are provided to enable specific features described below. These logic inputs all have a nominal hysteresis of 500 mV to improve noise performance. RESET. Allows minimum current consumption from the VBB supply. When RESET is low, all internal circuitry is disabled including the V5 output. When coming out of sleep state, the protection logic ensures that the gate drive outputs are off until the charge pump reaches proper operating conditions. The charge pump stabilizes in approximately 3 ms under nominal conditions. RESEThasaninternalpull-downresistor,50kΩtypical.How- ever, to allow the AMT49413 to start-up without the need for an external logic input, the RESET pin can be pulled to the battery voltage with an external pull-up resistor. Because RESET also has an internal clamp diode, 6 V typical, to limit the input current, the valueoftheexternalpull-upresistorshouldbegreaterthan20kΩ. The upper limit for the resistor must be low enough to ensure that the input voltage reaches the input high threshold, VINR. COAST. An active-low input which turns all FETs off without disabling the supplies or control logic. This allows the external FETs and the motor to be protected in case of a short circuit. MODE. Sets the current-decay method. Referring to Table 3, when in slow-decay mode, MODE = 1, only the high-side MOS- FET is switched off during a PWM-off cycle. In the fast-decay mode, MODE = 0, the device switches both the high-side and low-side MOSFETs. Slow decay allows a lower ripple current in the motor at the PWM frequency, but reduces the dynamic response of the cur- rent control. It is suitable for motors which run at a more-or-less constant speed. Fast decay provides improved current-control dynamic response, but increases the motor current ripple. It is suitable for motors used in start-stop and positioning applications. DIR. Determines the direction of motor torque output, as shown in Table 2. For an unloaded, low-inertia motor, this will also usu- |
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