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6

Document Number 85135

Rev. 1.2, 08-Sep-04

VISHAY

BC856 to BC859

Vishay Semiconductors

Figure 3. DC Current Gain vs. Collector Current

Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature

Figure 5. Collector Current vs. Base-Emitter Voltage

10

3

2

10

10

1

1

2

10

10

10

10

-1

-2

hFE

-IC

19183

-V

= 5 V

CE

100 °C

-50°C

T= 25 °C

amb

2

-1

10

10

10

1

10

3

10

4

nA

0

100

200 °C

test voltage - V

:

equal to the given

maximum value - V

CBO

CEO

typical

maximum

19184

-ICBO

Tj

10

2

10

10

-1

1

0

0.5

1V

-IC

-VBE

mA

-V

= 5 V

CE

T= 25 °C

amb

19197

Figure 6. Collector Saturation Voltage vs. Collector Current

Figure 7. Collector Base Capacitance, Emitter base Capacitance

vs. Bias Voltage

Figure 8. Relative h-Parameters vs. Collector Current

25 °C

-50 °C

T

= 100 °C

amb

-I /-I = 20

C B

-VCEsat

-IC

0.5

0.4

0.3

0.2

0.1

0

V

1

2

10

10

mA

19187

pF

20

10

0

0.1

1

10 V

T= 25 °C

amb

CEBO

CCBO

CEBO

CCBO

-VEBO

-VCBO,

19186

10

1

10

1

-IC

10 mA

102

-1

10-1

hie

hoe

hre

hfe

-V

=5V

CE

T= 25 °C

amb

19188