iC-GF

TRANSCEIVER

Rev F1, Page 13/30

ELECTRICAL CHARACTERISTICS

Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

808 tpcf

Propagation Delay

CFI → CFO/RX

V(CFO/RX) = 10 ↔ 90%, DEFAULT mode or

SPI mode with FCFI(1:0) = 01

2.4

10

µs

809 Vs()lo

Saturation Voltage lo at CFO/RX Open collector mode, I(CFO/RX) = 1.0 mA

0.4

V

810 Isc()lo

Short Circuit Current lo in

CFO/RX

Open collector mode,

V(CFO/RX) = 0.4 V...VCC

1.2

25

mA

811 Ilk()

Leakage Current at CFO/RX

Open collector mode, V(CFO/RX) = 0 V...VCC,

CFO/RX = off

-10

10

µA

812 Vt(CFP)hi Input Threshold Voltage hi at

CFP

2

V

813 Vt(CFP)lo Input Threshold Voltage lo at

CFP

0.8

V

814 Vt(CFP)hys Hysteresis at CFP

Vt(CFP)hys = Vt(CFP)hi − Vt(CFP)lo

200

280

mV

815 Ipd(CFP)

Pull-Down Current at CFP

V(CFP) = 0.4 V...Vt(CFP)lo

30

168

µA

V(CFP) > Vt(CFP)hi

10

40

µA

816 tsup(CFI)

Permissible Spurious Pulse

Width at CFI

No activity triggered, DEFAULT mode or SPI

mode with FCFI(1:0) = 01

2.5

µs

817 ttrig(CFI)

Required Pulse Width at CFI

Activity triggered, DEFAULT mode or SPI mode

with FCFI(1:0) = 01

6

µs

818 tsup(CFP) Permissible Spurious Pulse

Width at CFP

No activity triggered

5

µs

819 ttrig(CFP)

Required Pulse Width at CFP

Activity triggered

12

µs

820 Ipd(CFI)+

llk(QPx)

Pull-Down Current at CFI plus

leakage current at QPx

V(CFI) = 3 V...VBR, OEN = lo;

DEFAULT mode: CFP = lo

SPI mode: POL = 0, ENPUD = 1

20

µA

821 Vs(RX)hi

Saturation Voltage high at RX

SPI mode, ENOD = 0, I(RX) = -2 mA,

Vs(RX)hi = VCC3 − V(RX)

0.4

V

822 Vs(RX)lo

Saturation Voltage low at RX

SPI mode, ENOD = 0, I(RX) = 2 mA

0.4

V

823 Isc(RX)hi

Short Circuit current hi in RX

SPI mode, ENOD = 0,

V(RX) = 0...VCC3 − 0.4 V

-40

mA

824 Isc(RX)lo

Short Circuit current lo in RX

SPI mode, ENOD = 0, V(RX) = 0.4 V...VCC3

90

mA

825 tr(RX)

Rise Time at RX

SPI mode, ENOD = 0, CL(RX) = 30 pF,

0 → 90%VCC3

22

ns

826 tf(RX)

Fall Time at RX

SPI mode, ENOD = 0, CL(RX) = 30 pF,

100 → 10%VCC3

22

ns

Step Down Converter VHL, VH

901 VHn

Nominal Voltage at VH

Ri(LVH) < 1.1 Ω, CVH = 1 µF;

6.3

6.7

7.4

V

LVH = 22 µH, I(VH) = 0...50 mA

LVH = 100 µH, I(VH) = 0...100 mA, VBO > 10 V

902 VHnr

Nominal Voltage at VH, LVH

replaced by a resistor

R = 170 Ω, I(VH) = 0...10 mA

6.3

8.4

V

903 Ia(VHL)

max. DC Cut-Off Current in VHL

-200

mA

904 Va(VH)

Cut-Off Voltage at VH

Va(VH) > VHn

6.5

7.3

8.4

V

906 Vs(VHL)

Saturation Voltage at VHL vs.

VBR

I(VHL) = -50 mA

0.5

1.1

V

I(VHL) = -150 mA

1.5

3.0

V

907 Vf(VHL)

Saturation Voltage at VHL vs.

GND

Vf(VHL) = V(GND) − V(VHL);

I(VHL) = -50 mA

0.6

1.5

V

I(VHL) = -150 mA

1.7

2.9

V

908 Ilk(VHL)

Leakage Current at VHL

VHL = lo, V(VHL) = V(VH)

-20

20

µA

909 ηVH

Efficiency of VH switching

regulator

Ri(LVH) < 1.1 Ω, V(VBR) = 12...30 V;

70

%

LVH = 22 µH, I(VH) = 0...50 mA

LVH = 100 µH, I(VH) = 0...100 mA