SIN/COS SIGNAL CONDITIONER WITH 1Vpp DRIVER

Rev F3, Page 11/32

ELECTRICAL CHARACTERISTICS

Operating conditions: VDD = 4.3...5.5 V, Tj = -40...140 °C, IBN calibrated to 200 µA, reference point GNDS, unless otherwise stated.

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

B06 Ipu()

Input Pull-up Current

V() = 0 . . . VDD − 1 V, EPU = 1

-400

-300

-200

µA

B07 Rpu()

Input Pull-Up Resistor

EPU = 0

500

kΩ

B08 Vpu()

Pull-up Voltage

Vpu() = VDD − V(), I() = -5 µA, EPU = 1

0.4

V

B09 VTMon

Test Mode Activation Threshold

increasing voltage at ERR

VDD +

1.5

V

B10 VTMoff

Test Mode Disabling Threshold

decreasing voltage at ERR

VDD +

0.5

V

B11 VTMhys

Test Mode Hysteresis

VTMhys = VTMon − VTMoff

0.15

0.3

V

B12 Ilk()

Leakage Current

tristate or reversed supply voltage

-1

-10

-50

µA

B13 tp()tri

Propagation Delay System Error

to Driver Shutdown (tristate)

V(ERR): hi → lo

35

µs

Supply Switch and Reverse Polarity Protection VDDS, GNDS

C01 Vs()

Saturation Voltage

VDDS vs. VDD

Vs(VDDS) = VDD − V(VDDS)

I(VDDS) = -10 mA...0 mA

150

mV

I(VDDS) = -20 mA...-10 mA

250

mV

C02 Vs()

Saturation Voltage

GNDS vs. GND

Vs(GNDS) = V(GNDS) − GND

I(GNDS) = 0 mA...10 mA

150

mV

I(GNDS) = 10 mA...20 mA

250

mV

C03 C()

Backup Capacitor Analog Supply

VDDS vs. GNDS

100

nF

Serial Configuration Interface SCL, SDA

D01 Vs()lo

Saturation Voltage lo

I() = 4 mA

400

mV

D02 Isc()

Short-circuit Current lo

4

80

mA

D03 Vt()hi

Input Threshold Voltage hi

2

V

D04 Vt()lo

Input Threshold Voltage lo

0.8

V

D05 Vt()hys

Input Hysteresis

Vt()hys = Vt()hi − Vt()lo

300

500

mV

D06 Ipu()

Input Pull-up Current

V() = 0...VDDS − 1 V

-600

-300

-60

µA

D07 Vpu()

Input Pull-up Voltage

Vpu() = VDDS − V(), I() = -5 µA

0.4

V

D08 fclk(SCL)

Clock Frequency at SCL

ENFAST = 0

60

80

100

kHz

ENFAST = 1

240

320

400

kHz

D09 tbusy()cfg Duration of Startup Configuration IBN not calibated, EEPROM access without

read failure, time to outputs operational;

ENFAST = 0

40

55

ms

ENFAST = 1

25

35

ms

D10 tbusy()err

End Of I2C Communication; Time

Until I2C Slave Is Enabled

IBN not calibrated;

V(SDA) = 0 V

4

12

ms

V(SCL) = 0 V or arbitration lost

indef.

ms

no EEPROM

45

135

ms

CRC ERROR

95

285

ms

D11 td()

Start Of Master Activity On I2C

Protocol Error

SCL without clock signal: V(SCL) = constant;

IBN not calibrated

25

80

240

µs

IBN calibrated to 200 µA

64

80

120

µs

D12 td()i2c

Delay for I2C-Slave-Mode Enable no EEPROM, V(SDA) = 0 V

4

6.2

ms

Temperature Monitoring

E01 VTs

Temperature Sensor Voltage

VTs() = VDDS − V(PS), Tj = 27 °C,

600

650

700

mV

Calibration Mode 3, no load

E02 TCs

Temp. Co. of Temperature Sen-

sor Voltage

-1.8

mV/K

E03 VTth

Temperature Warning Activation

Threshold

VTth() = VDDS − V(NS), Tj = 27 °C,

Calibration Mode 3, no load;

CFGTA(3:0) = 0x00

260

310

360

mV

CFGTA(3:0) = 0x0F

470

550

630

mV

E04 TCth

Temp. Co. Temperature Warning

Activation Threshold

0.06

%/K

E05 Thys

Temperature Warning Hysteresis Tj = 27 °C

4

12

20

°C

E06 ∆T

Relative Shutdown Temperature ∆T = Toff − Tw, Tj = 27 °C

4

12

20

°C