MMRF2005N datasheet(2/18 Pages) NXP

2 / 18 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF2005N MMRF2005GN

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +65

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

Operating Junction Temperature Range (1,2)

–40 to +225

C

Input Power

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80C, 3.2 W CW, 940 MHz

Stage 1, 28 Vdc, IDQ1 = 106 mA

Stage 2, 28 Vdc, IDQ2 = 285 mA

Case Temperature 80C, 30 W CW, 940 MHz

Stage 1, 28 Vdc, IDQ1 =40 mA

Stage 2, 28 Vdc, IDQ2 = 340 mA

RJC

5.5

1.6

5.8

1.2

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B, passes 500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

II, passes 200 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =14 Adc)

VGS(th)

1.2

2.7

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ1 = 106 mA)

VGS(Q)

—

2.8

—

Vdc

Fixture Gate Quiescent Voltage (4)

(VDD =28 Vdc, IDQ1 = 106 mA, Measured in Functional Test)

VGG(Q)

6.9

9.4

11.9

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.

4. VGG =3.3  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic.

(continued)

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