MMRF2005N datasheet(3/18 Pages) NXP

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MMRF2005N MMRF2005GN

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =74 Adc)

VGS(th)

1.2

2.7

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ2 = 285 mA)

VGS(Q)

—

2.6

—

Vdc

Fixture Gate Quiescent Voltage (1)

(VDD =28 Vdc, IDQ2 = 285 mA, Measured in Functional Test)

VGG(Q)

4.2

5.9

7.6

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID = 740 mA)

VDS(on)

0.1

0.3

0.8

Vdc

Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.,

f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

35.9

Power Added Efficiency

PAE

16.5

—

Adjacent Channel Power Ratio

ACPR

—

–49.5

–46

dBc

Input Return Loss

IRL

—

–18.7

–9

Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 = 106 mA,

IDQ2 = 285 mA, 920–960 MHz Bandwidth

VDD =28 Vdc, IDQ1 =40 mA, IDQ2 = 340 mA

Pout @ 1 dB Compression Point, CW

P1dB

—

IMD Symmetry @ 25 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

MHz

Quiescent Current Accuracy over Temperature (4)

with3k Gate Feed Resistors (–30 to 85C)

IQT

—

0.02

—

Gain Flatness in 40 MHz Bandwidth @ Pout =3.2 W Avg.

—

0.2

—

Gain Variation over Temperature

(–30Cto+85C)

G

—

0.036

—

dB/C

Output Power Variation over Temperature

(–30Cto+85C)

P1dB

—

0.01

—

dBm/C

Table 6. Ordering Information

Device

Tape and Reel Information

Package

MMRF2005NR1

R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel

TO--270WB--16

MMRF2005GNR1

TO--270WBG--16

1. VGG =2.25  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic.

2. Part internally matched both on input and output.

3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.

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