MMRF2005N MMRF2005GN

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Wideband Integrated

Power Amplifiers

The MMRF2005N wideband integrated circuit is designed with on--chip

matching that makes it usable from 728 to 960 MHz. This multi--stage structure

is rated for 24 to 32 V operation and is ideal for applications including radio

communications, data links and UHF radar.

Driver Application — 900 MHz

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

(dB)

PAE

(%)

ACPR

(dBc)

920 MHz

36.6

16.1

–48.0

940 MHz

36.8

16.7

–48.7

960 MHz

36.6

17.3

–48.6

 Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 W CW

Driver Application — 700 MHz

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Frequency

(dB)

PAE

(%)

ACPR

(dBc)

728 MHz

36.4

16.1

–47.7

748 MHz

36.4

16.1

–47.8

768 MHz

36.4

16.0

–47.9

Features

 Characterized with series equivalent large--signal impedance parameters

and common source S--parameters

 On--chip matching (50 ohm input, DC blocked, > 5 ohm output)

 Integrated quiescent current temperature compensation with

 Integrated ESD protection

Document Number: MMRF2005N

Rev. 0, 8/2015

Freescale Semiconductor

Technical Data

728–960 MHz, 3.2 W AVG., 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

TO--270WB--16

PLASTIC

MMRF2005N

TO--270WBG--16

PLASTIC

MMRF2005GN

MMRF2005N

MMRF2005GN

(Top View)

GND

NC

GND

GND

1

2

3

4

5

6

7

8

16

15

14

13

12

9

10

GND

11

Quiescent Current

NC

NC

NC

NC

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

GND

GND

1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application circuit. See Fig. 9.

 Freescale Semiconductor, Inc., 2015. All rights reserved.