MMRF5014H datasheet(2/18 Pages) NXP

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RF Device Data

NXP Semiconductors

MMRF5014H

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

125

Vdc

Gate--Source Voltage

VGS

–8, 0

Vdc

Operating Voltage

VDD

0to+50

Vdc

Maximum Forward Gate Current @ TC =25C

IGMAX

Storage Temperature Range

Tstg

– 65to+150

C

Case Operating Temperature Range

–55 to +150

C

Operating Junction Temperature Range

–55 to +225

C

Absolute Maximum Channel Temperature (1)

TMAX

350

C

Total Device Dissipation @ TC =25C

Derate above 25C

232

1.16

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case

CW: Case Temperature 82C, 125 W CW, 50 Vdc, IDQ = 350 mA, 2500 MHz

RJC (IR)

0.86 (2)

C/W

Thermal Resistance by Finite Element Analysis, Channel--to--Case

Case Temperature 85C, PD =85 W

RCHC

(FEA)

1.48 (3)

C/W

Thermal Impedance by Infrared Measurement, Junction--to--Case

Pulse: Case Temperature 58C, 125 W Peak, 100 sec Pulse Width,

20% Duty Cycle, 50 Vdc, IDQ = 350 mA, 2500 MHz

ZJC (IR)

0.21

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B, passes 500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain Leakage Current

(VGS =–8 Vdc, VDS =10 Vdc)

IDSS

—

mAdc

Drain--Source Breakdown Voltage

(VGS =–8 Vdc, ID =25 mAdc)

V(BR)DSS

150

—

Vdc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =25 mAdc)

VGS(th)

–3.8

–2.9

–2.3

Vdc

Gate Quiescent Voltage

(VDS =50 Vdc, ID = 350 mAdc, Measured in Functional Test)

VGS(Q)

–3.2

–2.7

–2.2

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =–4 Vdc)

Crss

—

1.0

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =–4 Vdc)

Coss

—

7.7

—

Input Capacitance (4)

(VDS =50 Vdc, VGS =–4 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

51.0

—

1. Reliability tests were conducted at 225C. Operation with TMAX at 350C will reduce median time to failure.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by

the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –8.44 and B = 7210.

4. Part internally input matched.

(continued)

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