MMRF5014H

1

RF Device Data

NXP Semiconductors

RF Power GaN Transistor

This 125 W CW RF power transistor is optimized for wideband operation up to

2700 MHz and includes input matching for extended bandwidth performance.

With its high gain and high ruggedness, this device is ideally suited for CW,

pulse and wideband RF applications.

This part is characterized and performance is guaranteed for applications

operating in the 1–2700 MHz band. There is no guarantee of performance when

this part is used in applications designed outside of these frequencies.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

CW

125 CW

16.0

64.2

Pulse

(100 sec,

20% Duty Cycle)

125 Peak

18.0

66.8

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

CW

100 CW

12.0

40.0

CW

125 CW

14.5

45.0

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(100 sec,

20% Duty Cycle)

> 20:1 at

All Phase

Angles

5.0 Peak

(3 dB

Overdrive)

50

No Device

Degradation

1. Measured in 2500 MHz narrowband test circuit.

2. The values shown are the minimum measured performance numbers across the

indicated frequency range.

3. Measured in 200–2500 MHz broadband reference circuit.

4. Measured in 1300–1900 MHz broadband reference circuit.

Features

 Advanced GaN on SiC, offering high power density

 Decade bandwidth performance

 Low thermal resistance

 Input matched for extended wideband performance

 High ruggedness: > 20:1 VSWR

Typical Applications

 Ideal for military end--use applications,

including the following:

– Narrowband and multi--octave

wideband amplifiers

– Radar

– Jammers

–EMC testing

 Also suitable for commercial applications,

including the following:

– Public mobile radios, including

emergency service radios

– Industrial, scientific and medical

– Wideband laboratory amplifiers

– Wireless cellular infrastructure

Document Number: MMRF5014H

Rev. 3, 05/2018

NXP Semiconductors

Technical Data

1–2700 MHz, 125 W CW, 50 V

WIDEBAND

RF POWER GaN TRANSISTOR

MMRF5014H

NI--360H--2SB

Note: The backside of the package is the

source terminal for the transistor.

(Top View)

Drain

21

Figure 1. Pin Connections

Gate

 2015, 2017–2018 NXP B.V.