MMRF5014H datasheet(3/18 Pages) NXP

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MMRF5014H

RF Device Data

NXP Semiconductors

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In NXP Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 350 mA, Pout = 125 W Peak (25 W Avg.), f = 2500 MHz, 100

sec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.]

Power Gain

Gps

17.0

18.0

20.0

Drain Efficiency

D

64.3

66.8

—

Input Return Loss

IRL

—

–12

–9

Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ = 350 mA

Frequency

(MHz)

Signal Type

VSWR

(W)

Test Voltage, VDD

Result

2500

Pulse

(100 sec,

20% Duty Cycle)

> 20:1 at All Phase Angles

5.0 Peak

(3 dB Overdrive)

No Device Degradation

Table 5. Ordering Information

Device

Tape and Reel Information

Package

MMRF5014HR5

R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel

NI--360H--2SB

NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors

Turning the device ON

1. Set VGS to –5 V

2. Turn on VDS to nominal supply voltage (50 V)

3. Increase VGS until IDS current is attained

4. Apply RF input power to desired level

Turning the device OFF

1. Turn RF power off

2. Reduce VGS downto–5V

3. Reduce VDS down to 0 V (Adequate time must be allowed

for VDS to reduce to 0 V to prevent severe damage to device.)

4. Turn off VGS

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