4

OPA855

SBOS622A – JULY 2018 – REVISED OCTOBER 2018

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Long-term continuous output current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

5.5

V

Input voltage

V

Differential input voltage

1

V

Output voltage

V

Continuous input current

±10

mA

±100

mA

Junction temperature

150

°C

Operating free-air temperature

–40

125

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±1500

V

±1500

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

3.3

5

5.25

V

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

OPA855

UNIT

DSG (WSON)

8 PINS

Junction-to-ambient thermal resistance

80.1

°C/W

Junction-to-case (top) thermal resistance

100

°C/W

Junction-to-board thermal resistance

45

°C/W

Junction-to-top characterization parameter

6.8

°C/W

Junction-to-board characterization parameter

45.2

°C/W

Junction-to-case (bottom) thermal resistance

22.7

°C/W