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ALS31313 Datasheet(PDF) 5 Page - Allegro MicroSystems

Part # ALS31313
Description  Automotive Grade, 3-D Linear Hall-Effect Sensor with I2C Output and Advanced Low Power Management
PDF  25 Pages
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Manufacturer  ALLEGRO [Allegro MicroSystems]
Direct Link  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

ALS31313 Datasheet(HTML) 5 Page - Allegro MicroSystems

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Automotive Grade, 3-D Linear Hall-Effect Sensor
with I2C Output and Advanced Low Power Management
ALS31313
5
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ELECTRICAL CHARACTERISTICS: Valid through full range of TA, VCC = 3.0 V, CBYPASS = 0.1 µF, unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. [1]
Max.
Unit
ELECTRICAL CHARACTERISTICS
Supply Voltage
VCC
Normal operation
2.65
3.0
3.5
V
EEPROM programming [2]
2.8
–
3.5
V
Supply Current [3]
ICC(ACTIVE) Sleep = 0, or active state when sleep = 2
–
3.4
3.9
mA
ICC(INACTIVE) Sleep = 2; inactive state
–
12
–
µA
ICC(LPDCM)
Average current in LPDCM; Sleep = 2,
LPM_CNT_MAX = 7, BW Select = 6
–
12
–
µA
Average current in LPDCM; Sleep = 2,
LPP_CNT_MAX = 0, BW Select = 0
–
2
–
mA
ICC(SLEEP) VCC = 3.0 V, Sleep mode = 1, TA = 25°C
–
14
–
nA
ICC(EE)
VCC = VCC(MAX), EEPROM programming
occurring [2]
–
6.2
6.7
mA
Power-On Delay Time [4]
tPOD
TA = 25°C, after VCC reaches VCC(MIN),
BW Select = 0
–
600
–
µs
EEPROM Write Delay Time
tEEP
Wait after writing to EEPROM
–
50
–
ms
Linearity Sensitivity Error
ELIN
Through full range of BIN
–
±1.7
–
%
INT PIN CHARACTERISTICS
INT Output On Resistance
RON
–
90
–
Ω
INT Input Current
IINT(IN)
VIN = 0 V to VCC
–1
0
1
µA
INT Pull Up Resistance
RINT(PU)
2.4
10
–
kΩ
INT Pull Up Voltage
VINT(PU)
–
3.0
3.5
V
ADDRESS PIN CHARACTERISTICS [5]
Address Value 0 Reference
VADDR0
ADR0, ADR1
–
0
0.1
× VCC
Address Value 1 Reference
VADDR1
ADR0, ADR1
0.23
0.33
0.43
× VCC
Address Value 2 Reference
VADDR2
ADR0, ADR1
0.57
0.67
0.77
× VCC
Address Value 3 Reference
VADDR3
ADR0, ADR1
0.9
1
–
× VCC
Address Pin Input Resistance
RADD(IN)
ADR0, ADR1
0.8
1
1.2
MΩ
[1]
Typical values with ± are mean ±3 sigma.
[2]
Parameter is tested at wafer probe only.
[3]
ICC will vary based on lower power duty cycle settings. See Application Information section on power modes.
[4]
The device will not respond to I2C inputs until after the power-on delay time. tPOD will vary based on BW Select code, with code 0 being the slowest.
[5]
Based on characterization data and guaranteed by design. Not verified at final test.



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