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LTC4376 Datasheet(PDF) 8 Page - Analog Devices

Part # LTC4376
Description  7A Ideal Diode with Reverse Input Protection
PDF  16 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4376 Datasheet(HTML) 8 Page - Analog Devices

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LTC4376
8
Rev 0
For more information www.analog.com
APPLICATIONS INFORMATION
High slew rates coupled with parasitic inductances in
series with the input and output paths may cause poten-
tially destructive transients to appear at the IN, CS and
OUT pins of the LTC4376 during reverse recovery. A zero
impedance short-circuit directly across the input and
ground is especially troublesome because it permits the
highest possible reverse current to build up during the
delay phase. When the internal MOSFET finally turns off
to interrupt the reverse current, the LTC4376 IN and CS
pins experience a negative voltage spike while the OUT
pin spikes in the positive direction.
To prevent damage to the LTC4376 under conditions of
input short-circuit, protect the IN, CS and OUT pins as
shown in Figure 5. The IN and CS pins are protected by
clamping to the VSS pin with a Tranzorb or TVS. For input
voltages 24V and greater, D3 is needed to protect the inter-
nal MOSFET’s gate oxide during input short-circuit condi-
tions. Negative spikes, seen after the MOSFET turns off
during an input short, are clamped by D2, a 24V TVS. D2
allows reverse inputs to 24V while keeping the MOSFET
off and is not required if reverse input protection is not
needed. D1 blocks D2 from conducting during normal
operation. When the input short condition disappears,
the current stored in the source parasitic inductance, LS,
flows through the body diode of the MOSFET charging
up CLOAD. If CLOAD is small or nonexistent, both the IN/
CS and OUT pins may rise to a level that can damage
the LTC4376. In this case, D1 will need to be a TVS or
TransZorb to limit the voltage difference between the IN/
CS and VSS pins.
OUT is protected by the MOSFET’s avalanche breakdown.
Nevertheless, the MOSFET could be damaged by exces-
sive current in applications greater than 24V. If the input
is greater than 24V, then a 28V TVS (SMAJ28A) or a snub-
ber can be used to protect the MOSFET and OUT pin. The
snubber allows applications up to 40V (see Figure 13).
COUT and R1 preserve the fast turn-off time when output
parasitic inductance causes the IN and OUT voltages to
drop quickly.
Paralleling Supplies
Multiple LTC4376s can be used to combine the outputs of
two or more supplies for redundancy or for droop sharing,
as shown in Figure 6. For redundant supplies, the supply
with the highest output voltage sources most or all of the
load current. If this supply’s output is quickly shorted to
ground while delivering load current, the flow of current
temporarily reverses and flows backwards through the
LTC4376’s internal MOSFET. The LTC4376 senses this
reverse current and activates a fast pull-down to quickly
turn off the MOSFET.
If the other, initially lower supply was not delivering any
load current at the time of the fault, the output falls until
the body diode of its ORing internal MOSFET conducts.
Meanwhile, the LTC4376 charges the internal MOSFET
gate with 10µA until the forward drop is reduced to 30mV.
If this supply was sharing load current at the time of the
fault, its associated ORing internal MOSFET was already
driven partially on. In this case, the LTC4376 will simply
Figure 5.
D4*
SMAJ28A
* OPTIONAL FOR VIN > 24V
4376 F05
IN
CS
GATE
INK
SHDN
OUT
OUTK
VSS
LTC4376
D2
SMAJ24A
24V
D1
1N4148
D3
DDZ9699T
12V
COUT
>1.5µF
CLOAD
VOUT
VIN
R1
1k
LOUT
OUTPUT PARASITIC
INDUCTANCE
REVERSE
RECOVERY CURRENT
INPUT
SHORT
LIN
INPUT PARASITIC
INDUCTANCE
LS
SOURCE PARASITIC
INDUCTANCE
Reverse Recovery Produces Inductive Spikes at the IN, CS and OUT Pins. The Polarity of
Step Recovery Is Shown Across Parasitic Inductances



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