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LTC4376 Datasheet(PDF) 8 Page - Analog Devices |
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LTC4376 Datasheet(HTML) 8 Page - Analog Devices |
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8 / 16 page ![]() LTC4376 8 Rev 0 For more information www.analog.com APPLICATIONS INFORMATION High slew rates coupled with parasitic inductances in series with the input and output paths may cause poten- tially destructive transients to appear at the IN, CS and OUT pins of the LTC4376 during reverse recovery. A zero impedance short-circuit directly across the input and ground is especially troublesome because it permits the highest possible reverse current to build up during the delay phase. When the internal MOSFET finally turns off to interrupt the reverse current, the LTC4376 IN and CS pins experience a negative voltage spike while the OUT pin spikes in the positive direction. To prevent damage to the LTC4376 under conditions of input short-circuit, protect the IN, CS and OUT pins as shown in Figure 5. The IN and CS pins are protected by clamping to the VSS pin with a Tranzorb or TVS. For input voltages 24V and greater, D3 is needed to protect the inter- nal MOSFET’s gate oxide during input short-circuit condi- tions. Negative spikes, seen after the MOSFET turns off during an input short, are clamped by D2, a 24V TVS. D2 allows reverse inputs to 24V while keeping the MOSFET off and is not required if reverse input protection is not needed. D1 blocks D2 from conducting during normal operation. When the input short condition disappears, the current stored in the source parasitic inductance, LS, flows through the body diode of the MOSFET charging up CLOAD. If CLOAD is small or nonexistent, both the IN/ CS and OUT pins may rise to a level that can damage the LTC4376. In this case, D1 will need to be a TVS or TransZorb to limit the voltage difference between the IN/ CS and VSS pins. OUT is protected by the MOSFET’s avalanche breakdown. Nevertheless, the MOSFET could be damaged by exces- sive current in applications greater than 24V. If the input is greater than 24V, then a 28V TVS (SMAJ28A) or a snub- ber can be used to protect the MOSFET and OUT pin. The snubber allows applications up to 40V (see Figure 13). COUT and R1 preserve the fast turn-off time when output parasitic inductance causes the IN and OUT voltages to drop quickly. Paralleling Supplies Multiple LTC4376s can be used to combine the outputs of two or more supplies for redundancy or for droop sharing, as shown in Figure 6. For redundant supplies, the supply with the highest output voltage sources most or all of the load current. If this supply’s output is quickly shorted to ground while delivering load current, the flow of current temporarily reverses and flows backwards through the LTC4376’s internal MOSFET. The LTC4376 senses this reverse current and activates a fast pull-down to quickly turn off the MOSFET. If the other, initially lower supply was not delivering any load current at the time of the fault, the output falls until the body diode of its ORing internal MOSFET conducts. Meanwhile, the LTC4376 charges the internal MOSFET gate with 10µA until the forward drop is reduced to 30mV. If this supply was sharing load current at the time of the fault, its associated ORing internal MOSFET was already driven partially on. In this case, the LTC4376 will simply Figure 5. D4* SMAJ28A * OPTIONAL FOR VIN > 24V 4376 F05 IN CS GATE INK SHDN OUT OUTK VSS LTC4376 D2 SMAJ24A 24V D1 1N4148 D3 DDZ9699T 12V COUT >1.5µF CLOAD VOUT VIN R1 1k LOUT OUTPUT PARASITIC INDUCTANCE REVERSE RECOVERY CURRENT INPUT SHORT LIN INPUT PARASITIC INDUCTANCE LS SOURCE PARASITIC INDUCTANCE Reverse Recovery Produces Inductive Spikes at the IN, CS and OUT Pins. The Polarity of Step Recovery Is Shown Across Parasitic Inductances |
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