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LTC4376 Datasheet(PDF) 9 Page - Analog Devices

Part # LTC4376
Description  7A Ideal Diode with Reverse Input Protection
PDF  16 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4376 Datasheet(HTML) 9 Page - Analog Devices

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LTC4376
9
Rev 0
For more information www.analog.com
APPLICATIONS INFORMATION
drive the internal MOSFET gate harder in an effort to main-
tain a drop of 30mV.
Droop sharing can be accomplished if both power supply
output voltages and output impedances are nearly equal.
The 30mV regulation technique ensures smooth load shar-
ing between outputs without oscillation. The degree of shar-
ing is a function of internal MOSFET RDS(ON), the output
impedance of the supplies and their initial output voltages.
Load Switching and Inrush Control
By adding an external MOSFET as shown in Figure 7,
the LTC4376 can be used to control power flow in the
forward direction while retaining ideal diode behavior in
the reverse direction. The body diodes of both the exter-
nal and internal MOSFETs prohibit current flow when the
MOSFETs are off. The internal MOSFET serves as the ideal
diode, while the external MOSFET, M1, acts as a switch
to control forward power flow. On/Off control is provided
by the SHDN pin, and C1 and R3 may be added if inrush
control is desired.
When SHDN is driven high and provided VIN > VOUT + 30mV,
GATE sources 10µA and gradually charges C1, pulling up
both MOSFET gates. The external MOSFET operates as
source follower and
IINRUSH =
10µA • CLOAD
C1
Figure 6.
4376 F06
IN
CS
INK
SHDN
OUT
OUTK
VSS
LTC4376
D1B
SMAJ24CA
24V
COUTB
1.5µF
VINB = 12V
PSB
RTNB
R1B
1k
IN
CS
INK
SHDN
OUT
OUTK
VSS
LTC4376
D1A
SMAJ24CA
24V
COUTA
1.5µF
12V
7A
BUS
VINA = 12V
PSA
RTNA
R1A
1k
Redundant Power Supplies
Figure 7.
4376 F07
IN
CS
GATE
INK
SHDN
OUT
OUTK
VSS
LTC4376
D2
SMAJ24A
24V
D1
SMAJ40A
40V
D3
DDZ9699T
12V
COUT
1.5µF
CLOAD
VOUT
28V
7A
VIN
28V
R1
1k
OFF
ON
R2
10
R3
10k
C1
10nF
M1
PSMN005-75B
28V Load Switch and Ideal Diode with Reverse Input Protection



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