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LTC4376 Datasheet(PDF) 3 Page - Analog Devices |
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LTC4376 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 16 page ![]() LTC4376 3 Rev 0 For more information www.analog.com Note 1: Stresses beyond those listed underAbsolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into pins are positive, all voltages are referenced to VSS unless otherwise specified. Note 3: This voltage is set by the MOSFET’s body diode and will safely exceed 0.3V during start-up for a limited time determined by the body diode thermal dissipation. Note 4: An internal clamp limits the GATE pin to a minimum of 10V above CS or 90V above VSS. Driving this pin to voltages beyond the clamp may damage the device. Note 5: The IAS typical value is based on characterization and is not production tested. TYPICAL PERFORMANCE CHARACTERISTICS INK Current in Regulation INK Current in Shutdown CS Current in Shutdown VINK (V) 0 10 20 30 40 0 50 100 150 200 4376 G01 INK = CS = OUTK SHDN = 0V VINK (V) 0 10 20 30 40 0 10 20 30 40 4376 G02 TA = 125°C TA = 85°C TA = 25°C TA = –40°C INK = CS = OUTK SHDN = 0V VCS (V) 0 10 20 30 40 0 2 4 6 8 10 4376 G03 TA = 125°C TA = 85°C TA = 25°C TA = –40°C ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VINK = 4V to 40V, VIN = VINK, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ∆VSD(FWD) Body Diode Forward Voltage Drop (VIN – VOUT) IIN = 7A, MOSFET Off l 0.55 0.77 1 V RDS(ON) Internal N-Channel MOSFET On Resistance IIN = 7A l 15 30 mΩ IAS Peak Avalanche Current L = 0.1mH (Note 5) 40 A IGATE(UP) Gate Pull-Up Current GATE = INK, ∆VSD = 0.1V l –6 –10 –17 µA IGATE(DOWN) Gate Pull-Down Current Fault Condition, ∆VGATE = 5V, ∆VSD = –1V Shutdown Mode, ∆VGATE = 5V, ∆VSD = 0.7V l l 70 0.6 130 180 mA mA tOFF Gate Turn-Off Delay Time ∆VSD = 0.1V to –1V, ∆VGATE < 2V l 0.3 0.5 µs VSHDN(TH) SHDN Pin Input Threshold INK = 4V to 40V l 0.6 1.2 2 V VSHDN(FLT) SHDN Pin Float Voltage INK = 4V to 40V l 0.6 1.75 2.5 V ISHDN SHDN Pin Current SHDN = 0.5V SHDN = –40V l l –0.5 –0.4 –3 –0.8 –5 –1.5 µA mA ILEAK SHDN Leakage Current SHDN = 2.6V l 1 µA VCS(TH) Reverse CS Threshold for GATE Off GATE = 0V, IGATE(DOWN) = 1mA l –0.9 –1.8 –2.7 V |
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