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LTC4376 Datasheet(PDF) 3 Page - Analog Devices

Part # LTC4376
Description  7A Ideal Diode with Reverse Input Protection
PDF  16 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4376 Datasheet(HTML) 3 Page - Analog Devices

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LTC4376
3
Rev 0
For more information www.analog.com
Note 1: Stresses beyond those listed underAbsolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into pins are positive, all voltages are referenced to
VSS unless otherwise specified.
Note 3: This voltage is set by the MOSFET’s body diode and will safely
exceed 0.3V during start-up for a limited time determined by the body
diode thermal dissipation.
Note 4: An internal clamp limits the GATE pin to a minimum of 10V above
CS or 90V above VSS. Driving this pin to voltages beyond the clamp may
damage the device.
Note 5: The IAS typical value is based on characterization and is not
production tested.
TYPICAL PERFORMANCE CHARACTERISTICS
INK Current in Regulation
INK Current in Shutdown
CS Current in Shutdown
VINK (V)
0
10
20
30
40
0
50
100
150
200
4376 G01
INK = CS = OUTK
SHDN = 0V
VINK (V)
0
10
20
30
40
0
10
20
30
40
4376 G02
TA = 125°C
TA = 85°C
TA = 25°C
TA = –40°C
INK = CS = OUTK
SHDN = 0V
VCS (V)
0
10
20
30
40
0
2
4
6
8
10
4376 G03
TA = 125°C
TA = 85°C
TA = 25°C
TA = –40°C
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VINK = 4V to 40V, VIN = VINK, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
∆VSD(FWD) Body Diode Forward Voltage Drop (VIN – VOUT) IIN = 7A, MOSFET Off
l
0.55
0.77
1
V
RDS(ON)
Internal N-Channel MOSFET On Resistance
IIN = 7A
l
15
30
mΩ
IAS
Peak Avalanche Current
L = 0.1mH (Note 5)
40
A
IGATE(UP)
Gate Pull-Up Current
GATE = INK, ∆VSD = 0.1V
l
–6
–10
–17
µA
IGATE(DOWN) Gate Pull-Down Current
Fault Condition, ∆VGATE = 5V, ∆VSD = –1V
Shutdown Mode, ∆VGATE = 5V, ∆VSD = 0.7V
l
l
70
0.6
130
180
mA
mA
tOFF
Gate Turn-Off Delay Time
∆VSD = 0.1V to –1V, ∆VGATE < 2V
l
0.3
0.5
µs
VSHDN(TH) SHDN Pin Input Threshold
INK = 4V to 40V
l
0.6
1.2
2
V
VSHDN(FLT) SHDN Pin Float Voltage
INK = 4V to 40V
l
0.6
1.75
2.5
V
ISHDN
SHDN Pin Current
SHDN = 0.5V
SHDN = –40V
l
l
–0.5
–0.4
–3
–0.8
–5
–1.5
µA
mA
ILEAK
SHDN Leakage Current
SHDN = 2.6V
l
1
µA
VCS(TH)
Reverse CS Threshold for GATE Off
GATE = 0V, IGATE(DOWN) = 1mA
l
–0.9
–1.8
–2.7
V



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