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FC9911 Datasheet(PDF) 4 Page - First Silicon Co., Ltd |
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FC9911 Datasheet(HTML) 4 Page - First Silicon Co., Ltd |
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4 / 13 page ![]() FC9911 2012. 10. 31 4/13 Revision No : 0 Electrical Characteristics (Over recommended operating conditions. VIN = 24V, TA = 25°C, unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions Input VINDC Input DC supply voltage range* (1) - 250 V DC input voltage IINSD Shut-down mode supply current* - 1.0 1.5 mA PWMD connected to GND, VIN=24V Internal Regulator VDD Internally regulated voltage* 7.25 7.75 8.25 V VIN = 9-250V, IDD(ext) = 0, PWMD connected to GND UVLO VDD undervoltage lockout threshold 6.65 6.90 7.20 V VDD rising ∆ UVLO VDD undervoltage lockout hysteresis - 500 - mV --- VDD(ext) Steady state external voltage that can be applied at the VDD pin2 - - 12 V --- Reference VREF REF pin voltage (0°C < T < 25°C) 1.225 1.25 1.275 V REF bypassed with a 0.1µF capacitor to GND; IREF = 0; VDD = 7.75V; PWMD = GND REF pin voltage (-40°C < T < 85°C) 1.2125 1.25 1.275 VREFLINE Line regulation of reference voltage 0 - 20 mV REF bypassed with a 0.1µF capacitor to GND; IREF = 0; VDD = 7.25 - 12V; PWMD = GND VREFLOAD Load regulation of reference voltage 0 - 10 mV REF bypassed with a 0.1µF capacitor to GND; IREF = 0-500µA; PWMD = GND PWM Dimming VPWMD(lo) PWMD input low voltage* - - 0.80 V VDD = 7.25V - 12V VPWMD(hl) PWMD input high voltage* 2.0 - - V VDD = 7.25V - 12V RPWMD PWMD pull-down resistance 50 100 150 kΩ VPWMD = 5.0V GATE ISOURCE GATE short circuit current 0.2 - - A VGATE = 0V; VDD = 7.75V ISINK GATE sinking current 0.4 - - A V GATE = 7.75V ; V DD = 7.75V TRISE GATE output rise time - 50 85 ns C GATE = 1nF; V DD = 7.75V TFALL GATE output fall time - 25 45 ns CGATE = 1nF; VDD = 7.75V Over Voltage Protection VOVP IC shut down voltage* 1.215 1.25 1.285 V V DD = 7.25 - 12V ; OVP rising Current Sense TBLANK Leading edge blanking 100 - 375 ns --- TDELAY1 Delay to output of COMP comparator - - 180 ns COMP = VDD; CLIM = REF; VCS = 0 to 600mV step |
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