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OPA861IDBVT Datasheet(PDF) 5 Page - Texas Instruments

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Part # OPA861IDBVT
Description  Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA)
PDF  28 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

OPA861IDBVT Datasheet(HTML) 5 Page - Texas Instruments

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ELECTRICAL CHARACTERISTICS: V
S = +5V
OPA861
SBOS338 – AUGUST 2005
R
L = 500Ω to VS/2 and RADJ = 250Ω, unless otherwise noted.
OPA861ID, IDBV
TYP
MIN/MAX OVER TEMPERATURE
0
°C to
–40
°C to
MIN/
TEST
PARAMETER
CONDITIONS
+25
°C
+25
°C(2)
70°C(3)
+85°C(3)
UNITS
MAX
LEVEL(1)
OTA—Open-Loop (see Figure 30)
AC PERFORMANCE
G = +5, VO = 200mVPP,
Bandwidth
73
72
72
70
MHz
min
B
RL = 500Ω
G = +5, VO = 1VPP
73
MHz
typ
C
Slew Rate
G = +5, VO = 2.5V Step
410
395
390
390
V/µs
min
B
Rise Time and Fall Time
VO = 1V Step
4.4
ns
typ
C
Harmonic Distortion
G = +5, VO = 2VPP, 5MHz
2nd-Harmonic
RL = 500Ω
–67
–55
–54
–54
dB
max
B
3rd-Harmonic
RL = 500Ω
–57
–50
–49
–48
dB
max
B
Base Input Voltage Noise
f > 100kHz
2.4
3.0
3.3
3.4
nV/
√Hz
max
B
Base Input Current Noise
f > 100kHz
1.7
2.4
2.45
2.5
pA/
√Hz
max
B
Emitter Input Current Noise
f > 100kHz
5.2
15.3
16.6
17.5
pA/
√Hz
max
B
OTA DC PERFORMANCE(4) (see Figure 30)
Minimum OTA Transconductance (gm)
VO = ±10mV, RC = 50Ω, RE = 0Ω
85
70
67
65
mA/V
min
A
Maximum OTA Transconductance (gm)
VO = ±10mV, RC = 50Ω, RE = 0Ω
85
140
145
150
mA/V
max
A
B-Input Offset Voltage
VB = 0V, RC = 0Ω, RE = 100Ω
±3
±12
±15
±20
mV
max
A
Average B-Input Offset Voltage Drift
VB = 0V, RC = 0Ω, RE = 100Ω
±67
±120
µV/°C
max
B
B-Input Bias Current
VB = 0V, RC = 0Ω, RE = 100Ω
±1
±5
±6
±6.6
µA
max
A
Average B-Input Bias Current Drift
VB = 0V, RC = 0Ω, RE = 100Ω
±20
±25
nA/°C
max
B
E-Input Bias Current
VB = 0V, VC = 0V
±30
±100
±125
±140
µA
max
A
Average E-Input Bias Current Drift
VB = 0V, VC = 0V
±500
±600
nA/°C
max
B
C-Output Bias Current
VB = 0V, VC = 0V
±15
µA
typ
C
OTA INPUT (see Figure 30)
Most Positive B-Input Voltage
4.2
3.7
3.6
3.6
V
min
B
Least Positive B-Input Voltage
0.8
1.3
1.4
1.4
V
max
B
B-Input Impedance
455 || 2.1
k
Ω || pF
typ
C
Min E-Input Resistance
11.8
14.4
14.9
15.4
Ω
max
B
Max E-Input Resistance
11.8
7.1
6.9
6.7
Ω
min
B
OTA OUTPUT
Maximum E-Output Voltage Compliance
IE = ±1mA
4.2
3.7
3.6
3.6
V
min
A
Minimum E-Output Voltage Compliance
IE = ±1mA
0.8
1.3
1.4
1.4
V
max
A
E-Output Current, Sinking/Sourcing
VE = 0
±8
±7
±6.5
±6.5
mA
min
A
Maximum C-Output Voltage Compliance
IC = ±1mA
4.7
4.0
3.9
3.9
V
min
A
Minimum C-Output Voltage Compliance
IC = ±1mA
0.3
1.0
1.1
1.1
V
max
A
C-Output Current, Sinking/Sourcing
VC = 0
±8
±7
±6.5
±6.5
mA
min
A
C-Output Impedance
54 || 2
k
Ω || pF
typ
C
(1)
Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2)
Junction temperature = ambient for 25°C specifications.
(3)
Junction temperature = ambient at low temperature limit; junction temperature = ambient + 3°C at high temperature limit for over
temperature specifications.
(4)
Current is considered positive out of node.
5



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