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VSC7440 Datasheet(PDF) 361 Page - Microsemi Corporation

Part # VSC7440
Description  L2/L3 Enterprise Gigabit Ethernet Switch with 10 Gbps Links
PDF  444 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VSC7440 Datasheet(HTML) 361 Page - Microsemi Corporation

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VCore-III System and CPU Interfaces
VMDS-10492 VSC7440 Datasheet Revision 4.2
344
The memory controller automatically clears MEMCTRL_CTRL.INITIALIZE and sets the
MEMCTRL_STAT.INIT_DONE field after the controller and the memory module (or modules) are
operational. Software must wait for the INIT_DONE indication before continuing to calibrate the read
window.
4.8.3.5
DQS Read Window Calibration
After initialization of the memory controller, successful writes to the memory are guaranteed. Reading is
not yet possible, because the round trip delay between controller and memory modules are not
calibrated.
Calibration of the read window includes writing a known value to the start of the DDR memory and then
continually reading this value while adjusting the DQS window until the correct value is read from the
memory. The calibration procedure depends on the number of byte lanes that are used (see
MEMCTRL_CFG.DDR_WIDTH).
Note: For an ECC system, the calibration procedure for two byte lanes must be used, because the memory
controller is initialized without ECC enabled.
Calibration of One Byte Lane
The following procedure applies to systems where MEMCTRL_CFG.DDR_WIDTH is 0:
•
Write 0x000000FF to SBA address 0x20000000.
•
Set the MEMCTRL_DQS_DLY[0].DQS_DLY field to 0.
Perform the following steps to calibrate the read window. Do not increment the DQS_DLY field beyond its
maximum value. If the DQS_DLY maximum value is exceeded, it is an indication something is incorrect,
and the memory controller will not be operational.
1.
Read byte address 0x20000000. If the content is different from 0xFF, increment
MEMCTRL_DQS_DLY[0].DQS_DLY by one, and repeat step 1, else continue to step 2.
2.
Read byte address 0x20000000. If the content is different from 0x00, increment
MEMCTRL_DQS_DLY[0].DQS_DLY by one, and repeat step 2, else continue to step 3.
3.
Decrement MEMCTRL_DQS_DLY[0].DQS_DLY by three.
After the last step, which configures the appropriate DQS read window, the memory is ready for random
read and write operations. For more information about ECC or 1 gigabyte support, see ECC and 1-
Gigabyte Support, page 345.
Calibration of Two Byte Lanes
This procedure applies to systems where MEMCTRL_CFG.DDR_WIDTH is 1:
•
Write 0x0000FFFF to SBA address 0x20000000.
•
Write 0x00000000 to SBA address 0x20000004.
•
Set the MEMCTRL_DQS_DLY[0].DQS_DLY field to 0.
•
Set the MEMCTRL_DQS_DLY[1].DQS_DLY field to 0.
Perform the following steps to calibrate the read window. Do not increment the DQS_DLY fields beyond
their maximum value. If a DQS_DLY maximum value is exceeded, it is an indication something is
incorrect, and the memory controller will not be operational.
1.
Read byte addresses 0x20000000 and 0x20000001 from memory.
If the contents of byte address 0x20000000 is different from 0xFF, increment
MEMCTRL_DQS_DLY[0].DQS_DLY by one.
If the contents of byte address 0x20000001 is different from 0xFF, increment
MEMCTRL_DQS_DLY[1].DQS_DLY by one.
If any DQS_DLY was incremented repeat step 1, else continue to step 2.
2.
Read byte addresses 0x20000000 and 0x20000001 from memory.
If the contents of byte address 0x20000000 is different from 0x00, increment
MEMCTRL_DQS_DLY[0].DQS_DLY by one.
If the contents of byte address 0x20000001 is different from 0x00, increment



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