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EM4095 Datasheet(PDF) 8 Page - EM Microelectronic - MARIN SA |
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EM4095 Datasheet(HTML) 8 Page - EM Microelectronic - MARIN SA |
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8 / 10 page ![]() EM4095 Copyright 2002, EM Microelectronic-Marin SA 8 www.emmicroelectronic.com Read Only mode with external peak detector µP +5V L A C DV1 C DV2 C RES P4095 2 3 4 5 6 7 8 1 15 14 13 12 11 10 9 16 +5V RDY/CLK D1 R1 C1 C DEC C AGND MOD DEMOD_OUT SHD C DC2 C FCAP Fig. 10 Read/Write mode with external peak detector µP +5V L A C DV1 C DV2 C RES C DEC P4095 2 3 4 5 6 7 8 1 15 14 13 12 11 10 9 16 +5V RDY/CLK D1 R1 C1 C AGND MOD DEMOD_OUT SHD C DC2 C FCAP Fig. 11 As mentioned above for high Q antennas the voltage on antenna is high and read sensitivity is limited by demodulator sensitivity due to capacitive divider. Read sensitivity (and thus reading range) can be increased by using external envelope detector circuit. Input is taken on antenna high voltage side output is directly fed to CDEC_IN pin. However, the capacitor divider is still needed for PLL locking. Such configuration is shown in figure 5, the envelope detector is formed by three components: D1, R1 and C1. The configuration presented in figure 9 may also be used for read write applications but it has a drawback in the case fast recovery of reading is needed after communication reader to transponder is finished. The reason is in fact that DC voltage after diode D1 is lost during modulation and it takes very long time before it is established again. Figure 10 presents a solution to that problem. A high voltage NMOS transistor blocks the discharge path during modulation, so operating point is preserved. The signal controlling NMOS gate has to be put low synchronously with signal MOD, but it can be put high only after the amplitude on antenna has recovered after modulation. PCB Layout Refer to "EM4095 Application Note" (App. Note 404) EM4095 EM4095 |
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