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MIC2127A Datasheet(PDF) 5 Page - Microchip Technology |
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MIC2127A Datasheet(HTML) 5 Page - Microchip Technology |
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5 / 38 page  2016 Microchip Technology Inc. DS20005676B-page 5 MIC2127A Current Limit Current-Limit Comparator Offset VOFFSET –15 0 15 mV VFB = 0.59V ILIM Source Current ICL 90 100 110 µA VFB = 0.59V ILIM Source Current Tempco — 0.3 — µA/°C Negative Current Limit Comparator Threshold —— 48 — mV Zero Crossing Detection Comparator Zero Crossing Detection Comparator Threshold –24 –8 8 mV FET Drivers DH On-Resistance, High State RDH(PULL-UP) —2 3 DH On-Resistance, Low State RDH(PULL_DOWN) —2 4 DL On-Resistance, High State RDL(PULL-UP) —2 4 DL On-Resistance, Low State RDL(PULL_DOWN) —0.36 0.8 SW, VIN and BST Leakage BST Leakage — — — 30 µA VIN Leakage — — — 50 µA SW Leakage — — — 50 µA Power Good (PG) PG Threshold Voltage VPG_Rise 85 — 95 %VOUT VFB rising PG Hysteresis VPG_Hys —6 — %VOUT VFB falling PG Delay Time PG_R_DLY — 150 — µs VFB rising PG Low Voltage VOL_PG —140 200 mV VFB < 90% × VNOM, IPG =1 mA Thermal Protection Overtemperature Shutdown TSHDN — 150 — °C Junction temperature rising Overtemperature Shutdown Hysteresis TSHDN_Hys —15 — °C ELECTRICAL CHARACTERISTICS (Note 1) Electrical Specifications: unless otherwise specified, VIN =12V, VOUT = 1.2V; VBST –VSW =5V, TA =+25°C. Boldface values indicate –40°C TJ +125°C (Note 2). Parameter Symbol Min. Typ. Max. Units Test Conditions Note 1: Specification for packaged product only. 2: The application is fully functional at low VDD (supply of the control section) if the external MOSFETs have low voltage VTH. 3: Design specification. TEMPERATURE SPECIFICATIONS Electrical Specifications: unless otherwise specified, VIN =12V, VOUT = 1.2V; VBST –VSW =5V, TA =+25°C. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Storage Temperature TS –65 — +150 °C Junction Temperature TJ –40 — +150 °C Package Thermal Resistances Thermal Resistance, 16 Lead, 3x 3mm VQFN Junction to Ambient JA — 50.8 — °C/W Junction to Case JC 25.3 °C/W |
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