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LTC4151 Datasheet(PDF) 22 Page - Analog Devices |
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LTC4151 Datasheet(HTML) 22 Page - Analog Devices |
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22 / 82 page ![]() LTC4284 22 Rev. B For more information www.analog.com APPLICATIONS INFORMATION During the power-on-reset delay of 1.3ms, the fault regis- ters are cleared and the control registers are loaded with the data held in the corresponding EEPROM registers. The power-on-reset can be detected using the PORB bit in register 0x0E, which will be cleared when INTVCC dips below 3.8V. Set this bit to 1 in normal operating condi- tions and keep monitoring this bit. A 0 from subsequent reading indicates a power-on-reset has occurred. Inrush Control Inrush current control can be configured in two ways. First, if the DVDT bit in CONTROL_1 register 0x0A is set to 1, the inrush current is controlled in dV/dt mode by an external capacitor connected between RAMP and VEE (the RAMP capacitor, CR), as shown in Figure 6. In dV/dt mode, the inrush current is limited by controlling a con- stant output voltage ramp rate (dV/dt). During startup, when the GATE voltage reaches the MOSFET threshold voltage, RAMP outputs a fixed 2.5μA current to charge CR while the inrush current charges load capacitor CL. During dV/dt control the LTC4284 regulates the RAMP to the attenuated load voltage between RTNS and DRNS with an offset: VRAMP = VRTNS – VDRNS + 0.18V Figure 5. LTC4284 Turn-On Sequence in Parallel Mode –48V INPUT UVLO AND UV CLEARED 128ms GATE1 VIN – 1.8V 4284 F05 GATE2 CURRENT PGIO1 PWRGD1# READY PWRGD2# READY INTERNAL POWER GOOD INRUSH (LATCHED) LOAD1 LOAD1 + LOAD2 MOSFET VDS VIN – 1.8V 2.048V PGIO2 PGIO3 FAULTY POWER GOOD INPUT NORMAL POWER GOOD INPUT 256ms 512ms 256ms Figure 6. dV/dt Inrush Control Using RAMP Capacitor RS1 M2 RIN CIN M1 RS2 RRT 200k 1% RRB 5.11k 1% CL CR RDT 200k 1% RDB 5.11k 1% –48V RTN –48V INPUT VEE SENSE1– SENSE1+ GATE1 SENSE2– GATE2 VZ VIN RTNS LTC4284 SENSE2+ VEE VEE RAMP VLOAD VOUT DRNS + – 4284 F06 VEE |
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