DMA2286 datasheet(42/48 Pages) MICRONAS

42 / 48 page

DMA 2275, DMA 2286

9.6.5. Acquisition DRAM Interface Characteristics at TA = 0 to 65 °C, VSUP = 4.75 to 5.25 V, fΦM = 20.25 MHz

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Test Conditions

VDIL

RAM Data Input Low Voltage

–

0.8

VDIH

RAM Data Input High Voltage

2.0

–

VDOL

RAM Data Output Low Voltage

–

0.4

IDO = 1.6 mA

VDOH

RAM Data Output High Voltage

2.4

–

–IDO = 0.1 mA

tDT

RAM Data Output

Transition Time

–

CL = 10 pF

tDIS

RAM Data Input Setup Time

before CAS Output High

50, 49,

–

tDIH

RAM Data Input Hold Time

after CAS Output High

–

tDHR

RAM Data Output Hold Time

after RAS Output Low

250

–

tDS

RAM Data Output Setup Time

before CAS Output Low

–

tDH

RAM Data Output Hold Time

after CAS Output Low

130

–

VAOL

RAM Address Output

Low Voltage

51 to 55,

58 to 60

–

0.4

IAO = 1.6 mA

VAOH

RAM Address Output

High Voltage

2.4

–

–IAO = 0.1 mA

tAT

RAM Address Output

Transition Time

–

CL = 10 pF

tRAH

Row Address Output Hold Time

after RAS Output Low

51 to 55,

58 to 60,

49 57

–

tASR

Row Address Output Setup

Time before RAS Output Low

49, 57

100

–

tAR

Column Address Output Hold

Time after RAS Output Low

–

tCAH

Column Address Output Hold

Time after CAS Output Low

–

tASC

Column Address Output Setup

Time before CAS Output Low

–

VRASOL

RAS Output Low Voltage

–

0.4

IRASO = 1.6 mA

VRASOH

RAS Output High Voltage

2.4

–

–IRASO = 0.1 mA

tRAST

RAS Output Transition Time

–

CL = 10 pF

tRAS

RAS Output Low Pulsewidth

–

1600

–

tRP

RAS Output Precharge Time

100

–

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