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LT8331 Datasheet(PDF) 25 Page - Analog Devices

Part # LT8331
Description  60V 2MHz Low-IQ Boost, SEPIC and Flyback Controller
PDF  34 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT8331 Datasheet(HTML) 25 Page - Analog Devices

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LT8357
25
Rev. 0
For more information www.analog.com
The final RSENSE value should be lower than the calculated
RSENSE. A 20% to 30% margin is usually recommended.
Always choose a low ESL current sense resistor.
SEPIC Converter: Power MOSFET Selection
For the SEPIC configuration, choose a MOSFET with a
VDC rating higher than the sum of the output voltage and
input voltage by a safety margin (a 10V safety margin is
usually sufficient).
The power dissipated by the MOSFET in a SEPIC converter
is:
PFET =I2SW(MAX)•RDS(ON)•DMAX +2•
(VIN(MIN)+VOUT)2•IL(MAX)•CRSS•f /1A
The first term in this equation represents the conduction
losses in the device, and the second term represents the
switching loss. CRSS is the reverse transfer capacitance of
the MOSFET. f is the switching frequency. For maximum
efficiency, RDS(ON) and CRSS should be minimized.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
equation:
TJ =TA +PFET •θJA =TA +PFET •(θJC+θCA)
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that abso-
lute maximum ratings are not exceeded.
To achieve high switching frequency (such as 2MHz)
operation, QG and RDS(ON) of the power MOSFET must
be carefully selected. High performance power MOSFETs
with low QG and low RDS(ON) must be used. Since the gate
drive voltage is set by the 5V INTVCC supply, logic-level
threshold MOSFETs must be used in LT8357 applications.
When switching at high frequency like 2MHz, the substan-
tial gate charge current from INTVCC can be estimated as:
IINTVCC = f • QG
APPLICATIONS INFORMATION
Make sure the total required INTVCC current not exceed-
ing the INTVCC current limit in the data sheet. Typically,
MOSFETs with less than 10nC QG are recommended.
SEPIC Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with a low
forward drop and low reverse leakage is desirable. The
average forward current in normal operation is equal to
the output current, and the peak current is equal to:
ID(PEAK) =(1+
χ
2
)•IO(MAX)•
1
1−DMAX
It is recommended that the peak repetitive reverse voltage
rating VRRM is higher than VOUT + VIN(MAX) by a safety
margin (a 10V safety margin is usually sufficient).
The power dissipated by the diode is:
PD = IO(MAX) • VD
and the diode junction temperature is:
TJ = TA + PD • RθJA
The RθJA to be used in this equation normally includes
the RθJC for the device plus the thermal resistance from
the board to the ambient temperature in the enclosure.
TJ must not exceed the diode maximum junction tem-
perature rating.
SEPIC Converter: Output and Input Capacitor Selection
The selections of the output and input capacitors of
the SEPIC converter are similar to those of the boost
converter. Please refer to the Boost Converter, Output
Capacitor Selection and Boost Converter, Input Capacitor
Selection sections.
SEPIC Converter: Selecting the DC Coupling Capacitor
The DC voltage rating of the DC coupling capacitor (CDC,
as shown in Figure 10) should be larger than the maxi-
mum input voltage:
VCDC > VIN(MAX)



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