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QPD1029LEVB4 Datasheet(PDF) 6 Page - Qorvo, Inc |
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QPD1029LEVB4 Datasheet(HTML) 6 Page - Qorvo, Inc |
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6 / 16 page ![]() QPD1029L 1500 W, 65 V, 1.2 – 1.4GHz, GaN RF Input-Matched Transistor Datasheet Rev. B, Sep 2019 │ Subject to change without notice - 6 of 16- www.qorvo.com Measured Load-Pull Smith Charts at 65V 1, 2, 3 Notes: 1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See ”Pin Configuration and Description” for load pull reference planes where the performance was measured. 4. 1.3GHz, Load-pull 59.6 59.1 58.6 58.1 57.6 57.1 56.6 56.1 55.6 18.4 17.9 17.4 16.9 16.4 15.9 15.4 74.5 71.5 68.5 65.5 62.5 59.5 56.5 53.5 50.5 • Max Power is 60.1dBm at Z = 1.44-1.094i = -0.274-0.3139i • Max Gain is 18.8dB at Z = 1.163+0.714i = -0.4001+0.2401i • Max DEff is 76.4% at Z = 1.556+0.442i = -0.3047+0.1266i Zo = 3 3dB Compression Referenced to Peak Gain Zs(1fo) = 1.32-2.11i Zs(2fo) = 2.09+4.62i Zs(3fo) = 4.79+7.69i Zl(2fo) = 1.53+3.9i Power Gain DEFF |
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