QPD1029L

1500 W, 65 V, 1.2

– 1.4GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B, Sep

2019 │ Subject to change without notice

- 3 of 16-

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RF Characterization

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

3

 10:1

Notes

:

1.

2.

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

3.

Pulse: 100us, 10% Duty cycle

RF Characterization

Parameter

Min

Typ

Max

Units

–

19.8

–

 dB

Output Power at 3dB compression point, P3dB

–

1350

–

W

Drain Efficiency at 3dB compression point, DEFF3dB

–

65

–

%

Gain at 3dB compression point, G3dB

–

16.5

–

dB

Gate Leakage

= −3.3 V

- 40

–

–

mA

Notes:

1.

Maximum Gate Current