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QPD1029LEVB4 Datasheet(PDF) 5 Page - Qorvo, Inc |
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QPD1029LEVB4 Datasheet(HTML) 5 Page - Qorvo, Inc |
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5 / 16 page ![]() QPD1029L 1500 W, 65 V, 1.2 – 1.4GHz, GaN RF Input-Matched Transistor Datasheet Rev. B, Sep 2019 │ Subject to change without notice - 5 of 16- www.qorvo.com Measured Load-Pull Smith Charts at 65V 1, 2, 3 Notes: 1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See ”Pin Configuration and Description” for load pull reference planes where the performance was measured. 4. 1.2GHz, Load-pull 60 59.5 59 58.5 58 57.5 57 56.5 19.1 18.6 18.1 17.6 17.1 16.6 16.1 78.7 75.7 72.7 69.7 63.7 66.7 60.7 57.7 54.7 • Max Power is 60.1dBm at Z = 1.782-0.827i = -0.2183-0.2107i • Max Gain is 19.2dB at Z = 1.142+1.365i = -0.3067+0.4306i • Max DEff is 78.7% at Z = 1.745+0.713i = -0.2366+0.1858i Zo = 3 3dB Compression Referenced to Peak Gain Zs(1fo) = 0.91-1.89i Zs(2fo) = 0.37+1.52i Zs(3fo) = 0.54+0.64i Zl(2fo) = 1.24+3.31i Power Gain DEFF |
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