QPD1029L

1500 W, 65 V, 1.2

– 1.4GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B, Sep

2019 │ Subject to change without notice

- 2 of 16-

www.qorvo.com

Parameter

Rating

Units

225

V

-7 to +2

V

142

A

See pg. 12

mA

Power Dissipation, Pulsed,

1728

W

46.2

dBm

Mounting Temperature

(30 Seconds)

°C

Storage Temperature

−65 to +150

°C

Notes:

1. Operation of this device outside the parameter ranges given

above may cause permanent damage

2. Pulsed, 300us PW, 10% DC, Package base at 85 °C

3. Pulsed, 300us PW, 10% DC, T = 25 °C

Parameter

Min

Typ

Max Units

Operating Temp. Range

−40

+25

+85

 °C

–

+65

+70

V

1.5

A

–

45

–

A

–

−2.8

–

V

–

–

865

W

–

–

467

W

Notes:

1. Electrical performance is measured under conditions noted in

the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions

2. Package base at 85 °C

4. Pulsed, 300us PW, 10% DC

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.2

1.3

1.4

GHz

60.1

60.1

59.9

dBm

63.7

62.5

64.4

%

17.3

16.5

16.9

dB

Notes:

1.

2.

Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Measured Load Pull Performance

Parameter

Typical Values

Units

Frequency, F

1.2

1.3

1.4

GHz

58.5

58.5

58.5

dBm

78.7

76.4

76.4

%

18.8

18.5

18.2

dB

Notes:

1.

2.

Pulsed, 100 us Pulse Width, 10% Duty Cycle.