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SIC401DB Datasheet(PDF) 17 Page - Vishay Siliconix |
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SIC401DB Datasheet(HTML) 17 Page - Vishay Siliconix |
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17 / 30 page ![]() SiC401A, SiC401BCD www.vishay.com Vishay Siliconix S20-0483-Rev. E, 29-Jun-2020 17 Document Number: 63835 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Smart Power-Save SmartDriveTM For each DH pulse, the DH driver initially turns on the high side MOSFET at a lower speed, allowing a softer, smooth turn-off of the low side diode. Once the diode is off and the LX voltage has risen 0.5 V above PGND, the SmartDrive circuit automatically drives the high side MOSFET on at a rapid rate. This technique reduces switching losses while maintaining high efficiency and also avoids the need for snubbers for the power MOSFETs. Current Limit Protection The device features programmable current limiting, which is accomplished by using the RDS-ON of the lower MOSFET for current sensing. The current limit is set by RILIM resistor. The RILIM resistor connects from the ILIM pin to the LXS pin which is also the drain of the low side MOSFET. When the low side MOSFET is on, an internal ~ 10 μA current flows from the ILIM pin and through the RILIM resistor, creating a voltage drop across the resistor. While the low side MOSFET is on, the inductor current flows through it and creates a voltage across the RDS-ON. The voltage across the MOSFET is negative with respect to ground. If this MOSFET voltage drop exceeds the voltage across RILIM, the voltage at the ILIM pin will be negative and current limit will activate. The current limit then keeps the low side MOSFET on and will not allow another high side on-time, until the current in the low side MOSFET reduces enough to bring the ILIM voltage back up to zero. This method regulates the inductor valley current at the level shown by ILIM in Fig. 8. Fig. 8 - Valley Current Limit Setting the valley current limit to 15 A results in a peak inductor current of 15 A plus peak ripple current. In this situation, the average (load) current through the inductor is 15 A plus one-half the peak-to-peak ripple current. The internal 10 μA current source is temperature compensated at 4100 ppm in order to provide tracking with the RDS-ON. The RILIM value is calculated by the following equation. RILIM = 263 x ILIM x [0.112 x (5 V - VDD) + 1] When selecting a value for RILIM be sure not to exceed the absolute maximum voltage value for the ILIM pin. Note that because the low side MOSFET with low RDS-ON is used for current sensing, the PCB layout, solder connections, and PCB connection to the LX node must be done carefully to obtain good results. RILIM should be connected directly to LXS (pin 28). Soft-Start of PWM Regulator SiC401A/B has a programmable soft-start time that is controlled by an external capacitor at the SS pin. After the controller meets both UVLO and EN/PSV thresholds, the controller has an internal current source of 3 μA flowing through the SS pin to charge the capacitor. During the start up process (Fig. 9), 50 % of the voltage at the SS pin is used as the reference for the FB comparator. The PWM comparator issues an on-time pulse when the voltage at the FB pin is less than 40 % of the SS pin. As a result, the output voltage follows the SS voltage. The output voltage reaches and maintains regulation when the soft start voltage is 1.5 V. The time between the first LX pulse and V OUT reaching regulation is the soft-start time (tSS). The calculation for the soft-start time is shown by the following equation. The voltage at the SS pin continues to ramp up and eventually equals 64 % of VDD. After the soft start completes, the FB pin voltage is compared to an internal reference of 0.6 V. The delay time between the VOUT regulation point and PGOOD going high is shown by the following equation. VOUT drifts up to due to leakage current flowing into COUT Smart power save threshold (825 mV) FB threshold DH and DL off High-side drive (DH) Low-side drive (DL) Normal VOUT ripple VOUT discharges via inductor and low-side MOSFET Single DH on-time pulse after DL turn-off Normal DL pulse after DH on-time pulse DL turns on when smart PSAVE threshold is reached DL turns off FB threshold is reached IPEAK ILOAD ILIM Time t SS = CSS x 1.5 V 3 μA t PGOOD-DELAY = C SS x (0.64 x VDD - 1.5 V) 3 μA |
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