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SIC401DB Datasheet(PDF) 17 Page - Vishay Siliconix

Part # SIC401DB
Description  15 A microBUCK® SiC401A/B Integrated Buck Regulator with Programmable LDO
PDF  30 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIC401DB Datasheet(HTML) 17 Page - Vishay Siliconix

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SiC401A, SiC401BCD
www.vishay.com
Vishay Siliconix
S20-0483-Rev. E, 29-Jun-2020
17
Document Number: 63835
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Smart Power-Save
SmartDriveTM
For each DH pulse, the DH driver initially turns on the high
side MOSFET at a lower speed, allowing a softer, smooth
turn-off of the low side diode. Once the diode is off and the
LX voltage has risen 0.5 V above PGND, the SmartDrive
circuit automatically drives the high side MOSFET on at a
rapid rate. This technique reduces switching losses while
maintaining high efficiency and also avoids the need for
snubbers for the power MOSFETs.
Current Limit Protection
The device features programmable current limiting, which is
accomplished by using the RDS-ON of the lower MOSFET for
current sensing. The current limit is set by RILIM resistor. The
RILIM resistor connects from the ILIM pin to the LXS pin which
is also the drain of the low side MOSFET. When the low side
MOSFET is on, an internal ~ 10 μA current flows from the ILIM
pin and through the RILIM resistor, creating a voltage drop
across the resistor. While the low side MOSFET is on, the
inductor current flows through it and creates a voltage
across the RDS-ON. The voltage across the MOSFET is
negative with respect to ground. If this MOSFET voltage
drop exceeds the voltage across RILIM, the voltage at the ILIM
pin will be negative and current limit will activate. The
current limit then keeps the low side MOSFET on and will not
allow another high side on-time, until the current in the low
side MOSFET reduces enough to bring the ILIM voltage back
up to zero. This method regulates the inductor valley current
at the level shown by ILIM in Fig. 8.
Fig. 8 - Valley Current Limit
Setting the valley current limit to 15 A results in a peak
inductor current of 15 A plus peak ripple current. In this
situation, the average (load) current through the inductor is
15 A plus one-half the peak-to-peak ripple current.
The
internal
10
μA
current
source
is
temperature
compensated at 4100 ppm in order to provide tracking with
the RDS-ON.
The RILIM value is calculated by the following equation.
RILIM = 263 x ILIM x [0.112 x (5 V - VDD) + 1]
When selecting a value for RILIM be sure not to exceed the
absolute maximum voltage value for the ILIM pin. Note that
because the low side MOSFET with low RDS-ON is used for
current sensing, the PCB layout, solder connections, and
PCB connection to the LX node must be done carefully to
obtain good results. RILIM should be connected directly to
LXS (pin 28).
Soft-Start of PWM Regulator
SiC401A/B has a programmable soft-start time that is
controlled by an external capacitor at the SS pin. After the
controller meets both UVLO and EN/PSV thresholds, the
controller has an internal current source of 3 μA flowing
through the SS pin to charge the capacitor. During the start
up process (Fig. 9), 50 % of the voltage at the SS pin is used
as the reference for the FB comparator. The PWM
comparator issues an on-time pulse when the voltage at the
FB pin is less than 40 % of the SS pin. As a result, the output
voltage follows the SS voltage. The output voltage reaches
and maintains regulation when the soft start voltage
is
 1.5 V. The time between the first LX pulse and V
OUT
reaching regulation is the soft-start time (tSS). The
calculation for the soft-start time is shown by the following
equation.
The voltage at the SS pin continues to ramp up and
eventually equals 64 % of VDD. After the soft start
completes, the FB pin voltage is compared to an internal
reference of 0.6 V. The delay time between the VOUT
regulation point and PGOOD going high is shown by the
following equation.
VOUT drifts up to due to leakage
current flowing into COUT
Smart power save
threshold (825 mV)
FB
threshold
DH and DL off
High-side
drive (DH)
Low-side
drive (DL)
Normal VOUT ripple
VOUT discharges via inductor
and low-side MOSFET
Single DH on-time pulse
after DL turn-off
Normal DL pulse after DH
on-time pulse
DL turns on when smart
PSAVE threshold is reached
DL turns off FB
threshold is reached
IPEAK
ILOAD
ILIM
Time
t
SS = CSS x
1.5 V
3 μA
t
PGOOD-DELAY =
C
SS x (0.64 x VDD - 1.5 V)
3 μA



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