STGWA75H65DFB2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STGWA75H65DFB2

Description	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG090120201134PDT

350

300

250

200

150

100

125

175

PTOT

(W)

TC (°C)

Figure 2. Collector current vs case temperature

GADG090120201134CCT

125

100

125

175

(A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

GADG090120201135OC25

200

175

150

125

100

(A)

VCE (V)

9 V

7 V

13 V

11 V

VGE = 15 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG090120201136OC175

200

175

150

125

100

(A)

VCE (V)

9 V

7 V

13 V

11 V

VGE = 15 V

Figure 5. VCE(sat) vs junction temperature

GADG090120201137VCET

2.7

2.3

1.9

1.5

1.1

0.7

-50

100

150

VCE(SAT)

(V)

TJ (°C)

VGE = 15 V

IC = 150 A

IC = 75 A

IC = 37 A

Figure 6. VCE(sat) vs collector current

GADG090120201141VCEC

2.6

2.2

1.8

1.4

1.0

0.6

100

VCE(SAT)

(V)

IC (A)

VGE = 15 V

TJ = -40 °C

TJ = 175 °C

TJ = 25 °C

STGWA75H65DFB2

Electrical characteristics (curves)

DS13215 - Rev 2

page 5/15

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