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STGWA75H65DFB2 Datasheet(PDF) 8 Page - STMicroelectronics |
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STGWA75H65DFB2 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 15 page ![]() Figure 19. Switching times vs collector current IGBT100120201014STC 10 2 10 1 10 0 0 20 40 60 80 100 t (ns) IC (A) 2 2 td(off) tf td(on) tr Figure 20. Switching times vs gate resistance GADG150120200938STR 10 2 10 1 10 0 0 5 10 15 20 t (ns) RG (Ω) td(off) tf td(on) tr Figure 21. Reverse recovery current vs diode current slope GADG090120201200RRC 80 70 60 50 40 30 20 0 500 1000 1500 2000 2500 3000 Irrm (A) di/dt (A/µs) VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C Figure 22. Reverse recovery time vs diode current slope GADG090120201200RRT 240 220 200 180 160 140 0 500 1000 1500 2000 2500 3000 trr (ns) VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C di/dt (A/µs) Figure 23. Reverse recovery charge vs diode current slope GADG090120201201RRQ 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 500 1000 1500 2000 2500 3000 VCC = 400 V, VGE = 15 V, IF = 75 A, TJ = 175 °C di/dt (A/µs) Qrr (μC) Figure 24. Reverse recovery energy vs diode current slope GADG090120201202RRE 1.5 1.2 0.9 0.6 0.3 0.0 0 500 1000 1500 2000 2500 3000 Err (mJ) STGWA75H65DFB2 Electrical characteristics (curves) DS13215 - Rev 2 page 8/15 |
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