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STGWA75H65DFB2 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGWA75H65DFB2
Description  Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA75H65DFB2 Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
GADG090120201149CVR
10 3
10 2
10 1
10 -1
10 0
10 1
10 2
C
(pF)
VCE (V)
Cies
Coes
Cres
f = 1 MHz
Figure 14. Gate charge vs gate-emitter voltage
GADG090120201150GCGE
15
12
9
6
3
0
0
40
80
120
160
200
VGE
(V)
Qg (nC)
VCC = 520 V, IC = 75 A, IG = 12 mA
Figure 15. Switching energy vs collector current
GADG090120201151SLC
10
8
6
4
2
0
0
20
40
60
80 100 120 140
E
(mJ)
IC (A)
VCC = 400 V, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C
Etot
Eon
Eoff
Figure 16. Switching energy vs temperature
GADG090120201152SLT
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
50
100
150
E
(mJ)
TJ (°C)
Etot
Eon
Eoff
VCC = 400 V, IC = 75 A, Rg = 2.2 Ω, VGE = 15 V
Figure 17. Switching energy vs collector emitter voltage
GADG090120201154SLV
6
5
4
3
2
1
0
150
250
350
450
E
(mJ)
VCE (V)
Eoff
Eon
IC = 75 A, RG = 2.2 Ω, VGE = 15 V, TJ = 175 °C
Etot
Figure 18. Switching energy vs gate resistance
GADG090120201154SLG
6
5
4
3
2
1
0
5
10
15
20
E
(mJ)
RG (Ω)
Eoff
Eon
IC = 75 A, VCC = 400 V, VGE = 15 V, TJ = 175 °C
Etot
STGWA75H65DFB2
Electrical characteristics (curves)
DS13215 - Rev 2
page 7/15



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