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ESD752 Datasheet(PDF) 11 Page - Texas Instruments |
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ESD752 Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 25 page ![]() 8.2.2 Detailed Design Procedure The ESD752 and ESD762 has a VRWM of ± 24 V to prevent the diode from being damaged during a short event that can occur when one of the USB-PD slower speed lines (CC1, CC2, SBU1, SBU2, D+, and D-) is shorted to VBUS. The bidirectional characteristic protects both positive and negative polarity. The low 1.7 pF capacitance of the ESD762 device enables data rates up to 480 Mbps, which allows the designer to meet the requirements for the D+ and D- signals. The ESD752 has an IPP = 5.7 A (8/20 µs) surge current capability making it suitable for protecting the VBUS power rail. 8.2.3 Application Curves Figure 8-2. +8-kV Clamped IEC Waveform Figure 8-3. −8-kV Clamped IEC Waveform 9 Power Supply Recommendations These are passive TVS diode-based ESD protection devices; therefore, there is no requirement to power it. Ensure that the maximum voltage specifications for each pin are not violated. www.ti.com ESD752, ESD762 SLVSGX0B – MAY 2022 – REVISED NOVEMBER 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 11 Product Folder Links: ESD752 ESD762 |
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