6.6 Electrical Characteristics (continued)

over operating free-air temperature range (unless otherwise noted). Typical values are at VVCC = 24 V, VVCC_IN = 3.3 V,

VVCC_OUT = 3.3 V and TA = 25 ℃ unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PROTECTION CIRCUITS

V(UVLO)

VCC under voltage lockout

VCC falling; NFAULT = Hi-Z

TIOS102 and 3.3V

LDO version

4.2

4.4

V

V(UVLO)

VCC under voltage lockout

VCC rising; NFAULT = Hi-Z

4.6

4.75

V

V(UVLO)

VCC under voltage lockout

VCC falling; NFAULT = Hi-Z

TIOS1025

6

6.3

V

VCC rising; NFAULT = Hi-Z

6.5

6.8

V

V(UVLO,HYS)

VCC under voltage lockout

hysteresis

Rising to falling threshold

Rising to falling

threshold

200

mV

V(UVLO_IN)

VCC_IN under voltage lockout

(No LDO option)

VCC_IN falling; NFAULT = Hi-Z

2.3

V

VCC_IN rising; NFAULT = LOW

2.5

V

V(UVLO_IN,HY

S)

VCC_IN under voltage hysteresis

(No LDO option)

Rising to falling threshold

190

mV

T(WRN)

Thermal warning

Die temperature TJ

125

°C

T(SDN)

Thermal shutdown

150

160

°C

T(HYS)

Hysteresis for thermal shutdown

and warning thresholds

14

°C

IREV

Leakage current in reverse

polarity

EN=LOW, IN=x; V(OUT) < V(GND) or V(OUT) > V(VCC), up

to |36 V|

60

µA

EN=LOW, IN=x; V(OUT) < V(GND) or V(OUT) > V(VCC), up

to |55 V|

110

µA

EN = HIGH, IN = LOW; V(OUT to VCC) = 3 V

640

µA

EN = HIGH, IN = HIGH; V(OUT to GND) = -3 V

10

µA

LINEAR REGULATOR (LDO)

V(VCC_OUT)

Voltage regulator output

5 V LDO version

4.75

5

5.25

V

3.3 V LDO version

3.13

3.3

3.46

V

V(DROP)

Voltage regulator drop-out voltage

(V(VCC) – V(VCC_OUT))

ICC = 20 mA load current

5 V LDO

1.9

V

3.3 V LDO

1.4

V

REG

Line regulation (dV(VCC_OUT)/

dV(VCC))

I(VCC_OUT) = 1 mA

1.7

mV/V

LREG

Load regulation (dV(VCC_OUT)/

V(VCC_OUT))

V(VCC) = 24 V, I(VCC_OUT) = 100 µA to 20 mA

1%

PSSR

Power Supply Rejection Ratio

100 kHz, I(VCC_OUT) = 20 mA

40

dB

(1)

Current fault indication will be active. Current fault auto recovery will be de-activated.

(2)

If operating continuously with this current limit, ensure that the current through the device does not cause the TJ to be greater than

T(SDN) for a given ambient temperature and thermal property of the system. For pulse durations t < 200 µs, the device can source or

sink current of at least 500 mA across the recommended operating conditions.

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SLLSFL4A – FEBRUARY 2022 – REVISED DECEMBER 2022

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