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MPC601EC Datasheet(PDF) 4 Page - NXP Semiconductors

Part # MPC601EC
Description  PowerPC 601™ RISC Microprocessor Hardware Specifications
PDF  24 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPC601EC Datasheet(HTML) 4 Page - NXP Semiconductors

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4
601 Hardware Specifications, Rev 3
Preliminary/Subject to Change without Notice
1.3 PowerPC 601 Microprocessor Electrical
Specifications
This section provides both the AC and DC electrical specifications for the 601 and 601v. The following
specifications are preliminary and subject to change without notice.
1.3.1 PowerPC 601 Microprocessor DC Electrical Characteristics
Table 2 provides the maximum ratings for the 601 and 601v.
Note: The 601v (100 MHz) requires two power supplies—VddINT and VddI/O. The VddI/O level should not
exceed the VddINT level by 2.5 volts. VddINT should not be raised greater than 0.5 volts above VddI/O. It is
recommended that VddI/O and VddINT be brought up and powered down simultaneously.
Table 3 provides the DC electrical characteristics for the 601 and 601v.
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
601 and 601v chip performance
Fmax
50, 66, 80
100 (601v)
MHz
Supply voltage (core logic)
VddINT
3.9
2.9
V
Supply voltage (I/O circuits)
VddI/O
3.9
5.5
V
Input voltage (VddI/O = 3.6 V)
Vin
VddI/O + 2.1
—
V
Input voltage (VddI/O = 5.0 V)
Vin
—
VddI/O + 0.7
V
Maximum operating junction temperature
Tj
TBD
TBD
°C
Operating junction temperature range for AC specs
Tj
10 to 85
10 to 85
°C
Storage temperature range
Tstg
1
°C to 60 °C, 5% to 80%
relative humidity
°C
Table 3. DC Electrical Characteristics
Characteristic
Notes
Symbol
Min
Max
Unit
Input high voltage
VIH
2
5.5
V
Input low voltage
VIL
GND
0.8
V
Input leakage current
GND < Vin < VddI/O + 1.0 V
VddI/O + 1.0 V < Vin < VddI/O + 1.9 V
VddI/O = 3.6 V
Note 1
Iin
Iin
—
—
10
100
µA
µA
Input leakage current (601v)
GND < Vin< VddI/O + 0.6 V
VddI/O = 5.0 V
Note 1
Iin
—10
µA
Hi-Z (off-state) leakage current
(601—50, 66, 80 MHz)
GND < Vin < VddI/O
VddI/O < Vin < VddI/O + 0.6 V
VddI/O + 0.6 V < Vin < VddI/O + 1.9 V
@ 85
°C T
j
VddI/O = 3.6 V
Note 2
ITSI
ITSI
ITSI
—
—
—
10
1000
100
µA
µA
µA
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com



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