BF747 datasheet(9/11 Pages) PHILIPS

9 / 11 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BF747

Table 1

Common base Y-parameters, IE = −2 mA; VCB = 10 V, typical values.

Table 2

Common base Y-parameters, IE = −5 mA; VCB = 10 V, typical values.

f (MHz)

Y11

Y21

Y12

Y22

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

69.0

−10.2

−68.0

12.3

−0.02

−0.1

−0.01

0.3

100

60.4

−20.6

−58.0

25.6

−0.06

−0.3

−0.08

0.7

200

45.0

−27.4

−39.1

34.5

−0.10

−0.6

0.19

1.4

300

34.3

−26.4

−25.4

34.0

−0.20

−0.8

0.29

1.9

400

27.7

−23.3

−17.2

31.1

−0.20

−1.0

0.37

2.5

500

24.0

−20.4

−11.7

27.6

−0.20

−1.2

0.45

3.0

600

21.5

−18.0

−7.8

25.0

−0.20

−1.4

0.53

3.6

700

20.0

−15.6

−5.3

22.6

−0.20

−1.6

0.60

4.2

800

18.6

−14.0

−3.0

20.2

−0.20

−1.8

0.69

4.7

900

18.3

−12.8

−1.3

18.7

−0.20

−2.0

0.82

5.3

1000

17.8

−11.7

−0.1

17.1

−0.20

−2.2

0.95

5.9

f (MHz)

Y11

Y21

Y12

Y22

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

132.6

−35.7

−130.5

38.8

−0.06

−0.2

−0.06

0.4

100

96.3

−62.0

−91.1

67.9

−0.20

−0.5

0.21

0.8

200

54.7

−57.8

−46.0

64.7

−0.30

−0.7

0.38

1.4

300

37.5

−46.9

−26.4

53.8

−0.40

−0.8

0.47

2.0

400

29.2

−38.6

−16.6

45.8

−0.40

−1.0

0.58

2.5

500

25.3

−32.8

−11.0

39.8

−0.40

−1.3

0.63

3.1

600

22.0

−28.4

−6.3

35.0

−0.40

−1.4

0.71

3.6

700

20.3

−25.2

−3.3

31.4

−0.40

−1.6

0.80

4.2

800

18.7

−22.6

−0.6

27.6

−0.40

−1.9

0.88

4.7

900

17.8

−20.7

1.4

25.2

−0.40

−2.1

1.01

5.3

1000

17.3

−19.1

3.0

23.0

−0.40

−2.3

1.15

6.0

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