BF747 datasheet(10/11 Pages) PHILIPS

10 / 11 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BF747

Table 3

Common base Y-parameters, IE = −10 mA; VCB = 10 V, typical values.

Table 4

Common base Y-parameters, IE = −15 mA; VCB = 10 V, typical values.

f (MHZ)

Y11

Y21

Y12

Y22

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

189.0

−79.6

−185.5

83.0

−0.10

−0.3

−0.09

0.4

100

108.5

−99.0

−101.4

105.4

−0.30

−0.5

0.30

0.9

200

55.2

−76.2

−44.6

82.8

−0.50

−0.7

0.44

1.4

300

37.1

−59.0

−24.3

65.7

−0.50

−0.9

0.60

2.0

400

28.8

−47.6

−14.6

54.4

−0.60

−1.0

0.69

2.5

500

24.7

−40.2

−8.6

46.7

−0.60

−1.3

0.75

3.1

600

21.2

−35.0

−3.4

40.8

−0.60

−1.5

0.84

3.6

700

19.3

−31.0

−0.2

36.2

−0.60

−1.7

0.93

4.2

800

17.2

−27.5

2.6

31.1

−0.60

−1.9

1.00

4.7

900

16.4

−25.2

4.6

28.3

−0.60

−2.1

1.15

5.3

1000

15.8

−23.0

6.0

25.5

−0.60

−2.3

1.31

6.0

f (MHz)

Y11

Y21

Y12

Y22

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

REAL

(mS)

IMAG.

(mS)

206.5

−113.8

−202.6

118.1

−0.20

−0.3

0.2

0.5

100

104.3

−114.0

−96.4

120.1

−0.40

−0.5

0.4

0.9

200

53.1

−81.1

−41.7

87.7

−0.50

−0.7

0.6

1.4

300

35.9

−62.1

−22.0

68.6

−0.60

−0.8

0.7

2.0

400

28.1

−50.0

−12.5

56.9

−0.60

−1.1

0.8

2.5

500

23.4

−42.3

−6.1

48.2

−0.60

−1.3

0.8

3.1

600

20.1

−36.4

−1.2

41.6

−0.60

−1.5

0.9

3.6

700

18.2

−32.0

2.0

36.7

−0.60

−1.7

1.0

4.2

800

16.2

−28.2

4.5

31.3

−0.60

−1.9

1.1

4.7

900

15.5

−25.7

6.5

28.1

−0.60

−2.1

1.3

5.3

1000

14.7

−23.5

7.9

24.9

−0.60

−2.3

1.4

5.9

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