BF747 datasheet(3/11 Pages) PHILIPS

3 / 11 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BF747

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =70 °C; note 1

260

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

100

hFE

DC current gain

IC = 2 mA; VCE = 10 V

250

transition frequency

IC = 15 mA; VCE = 10 V; f = 500 MHz

0.8

1.2

1.6

GHz

Cre

feedback capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

0.5

−

GUM

maximum unilateral power gain;

note 1

IC = 15 mA; VCE = 10 V; f = 100 MHz

−

10 log

–





–





-------------------------------------------------------------- dB

Fig.2 Power derating curve.

handbook, halfpage

100

200

400

300

100

200

MBB401

150

Ts (

oC)

Ptot

(mW)

VCE =10V.

Fig.3

DC current gain as a function of

collector current.

handbook, halfpage

140

100

MBB397

hFE

10 1

10 2

(mA)

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