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BF747 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BF747 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 11 page ![]() September 1995 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 Fig.4 Feedback capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz. handbook, halfpage 0 1.2 0.8 0.4 0 420 MBB400 812 16 VCB (V) Cre (pF) VCE = 10 V; f = 500 MHz. Fig.5 Transition frequency as a function of collector current. handbook, halfpage 1.4 0.6 1.0 MBB399 0.2 110 fT (GHz) 10−1 102 IC (mA) VCE = 10 V; f = 100 MHz. Fig.6 Maximum unilateral power gain as a function of collector current. handbook, halfpage 010 20 30 40 30 10 0 20 MBB407 IC (mA) GUM (dB) IC = 15 mA; VCE =10V. Fig.7 Maximum unilateral power gain as a function of frequency. handbook, halfpage 50 −10 30 40 10 MBB408 102 103 104 20 f (MHz) GUM (dB) 10 0 |
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