September 1995

2

Philips Semiconductors

Product specification

NPN 1 GHz wideband transistor

BF747

FEATURES

• Stable oscillator operation

• High current gain

• Good thermal stability.

APPLICATIONS

• It is intended for VHF and UHF TV-tuner applications

and can be used as a mixer and/or oscillator.

DESCRIPTION

Low cost NPN transistor in a plastic SOT23 package.

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 SOT23.

Marking code: E15.

handbook, halfpage

MSB003

Top view

12

3

QUICK REFERENCE DATA

Note

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX. UNIT

collector-emitter voltage

open base

−

20

V

collector-base voltage

open emitter

−

30

V

emitter-base voltage

open collector

−

3V

peak collector current

−

50

mA

total power dissipation

−

300

mW

transition frequency

1.6

GHz

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX. UNIT

collector-emitter voltage

open base

−

20

V

collector-base voltage

open emitter

−

30

V

emitter-base voltage

open collector

−

3V

peak collector current

−

50

mA

total power dissipation

−

300

mW

storage temperature

−55

+150

°C

junction temperature

−

150

°C