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BGY282 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BGY282 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 2001 Dec 04 3 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note: PL is forward power, measured in a coupler. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS1, VS2 DC supply voltage VAPC =0; RFIN =off − 7V VAPC > 0.5 V; RFIN =on − 5.5 V VAPC DC control voltage − 3V PD1, PD2 input drive power − 10 dBm PL1 load power 1 (GSM900) − 36 dBm PL1 load power 1 (GSM900) δ = 4 : 8; VSWR out >2 :1 − 35 dBm PL2 load power 2 (GSM1800) − 35 dBm PL2 load power 2 (GSM1800) δ = 4 : 8; VSWR out >2 :1 − 34 dBm PS1 total power from supply during pulse (GSM900) δ =4 : 8 − 7.5 W PS2 total power from supply during pulse (GSM1800) δ =4 : 8 − 4.5 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +90 °C |
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