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S29CD032J Datasheet(PDF) 59 Page - SPANSION

Part # S29CD032J
Description  32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
PDF  76 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S29CD032J Datasheet(HTML) 59 Page - SPANSION

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September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
57
Da ta
Shee t
(Prelim i nar y )
18.5
Write Protect (WP#)
Figure 18.7 WP# Timing
18.6
Erase/Program Operations
Notes
1. Not 100% tested.
2. See Section 20.1, Command Definitions on page 69 for more information.
3. Program Erase Parameters are the same, regardless of Synchronous or Asynchronous mode.
Program/Erase Command
WP#
Data
Valid WP#
tBUSY
tDS
tDH
WE#
RY/BY#
tWPWS
tWPRH
tWP
Table 18.5 Erase/Program Operations
Parameter
Description
All Speed
Options
Unit
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
60
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
25
ns
tDVWH
tDS
Data Setup to WE# Rising Edge
Min
18
ns
tWHDX
tDH
Data Hold from WE# Rising Edge
Min
2
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low) (Note 1)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
WE# Width
Min
25
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2), Double-Word
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec.
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY# (Note 1)
Min
0
ns
tBUSY
RY/BY# Delay After WE# Rising Edge (Note 1)
Max
90
ns
tWPWS
WP# Setup to WE# Rising Edge with Command (Note 1)
Min
20
ns
tWPRH
WP# Hold after RY/BY# Rising Edge (Note 1)
Max
2
ns



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