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DH321 Datasheet(PDF) 5 Page - ON Semiconductor |
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DH321 Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 16 page ![]() FSDH321, FSDL321 www.onsemi.com 5 ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) (continued) Symbol Unit Max Typ Min Condition Parameter TOTAL DEVICE SECTION IOP Operating Supply Current (control part only) VCC = 14 V, VFB = 0 V 1 3 5 mA ICH Start−Up Charging Current VCC = 0 V 0.7 0.85 1.0 mA VSTR Vstr Supply Voltage VCC = 0 V 35 − − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Pulse test: Pulse width ≤ 300us, duty ≤ 2% 9. These parameters, although guaranteed, are tested in EDS (wafer test) process 10. These parameters, although guaranteed, are not 100% tested in production Table 3. COMPARISON BETWEEN FSDM311 AND FSDx321 Function FSDM311 FSDx321 FSDx321 Advantages Soft−Start 15 ms 15 ms (same for both devices) S Gradually increasing current limit during soft−start further reduces peak current and voltage stresses S Eliminates external components used for soft−start in most applications S Reduces or eliminates output overshoot External Current Limit not applicable Programmable of default current limit S Smaller transformer S Allows power limiting (constant over−load power) S Allows use of larger device for lower losses and higher efficiency Frequency Modulation not applicable ±3.0 KHz @ 100 KHz ±1.5 KHz @ 50 KHz S Reduces conducted EMI Burst Mode Operation Built into controller Built into controller (same for both devices) S Improves light load efficiency S Reduces power consumption at no−load S Transformer audible noise reduction Drain Creepage at Package 7.62 mm 7.62 mm (same for both devices) S Greater immunity to arcing provoked by dust, debris and other contaminants |
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