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DH321 Datasheet(PDF) 3 Page - ON Semiconductor |
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DH321 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 16 page ![]() FSDH321, FSDL321 www.onsemi.com 3 Table 2. PIN DEFINITIONS Pin Number Pin Name Pin Function Description 1 GND SENSEFET source terminal on primary side and internal control ground. 2 Vcc Positive supply voltage input. Although connected to an auxiliary transformer winding, current is sup- plied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram section). It is not until Vcc reaches the UVLO upper threshold (12 V) that the internal start−up switch opens and device power is supplied via the auxiliary transformer winding. 3 Vfb The feedback voltage pin is the non−inverting input to the PWM comparator. It has a 0.9 mA current source connected internally while a capacitor and optocoupler are typically connected externally. A feedback voltage of 6 V triggers over load protection (OLP). There is a time delay while charging external capacitor Cfb from 3 V to 6 V using an internal 5 mA current source. This time delay prevents false triggering under transient conditions, but still allows the protection mechanism to operate under true overload conditions. 4 Ipk This pin adjusts the peak current limit of the SENSEFET. The feedback 0.9 mA current source is di- verted to the parallel combination of an internal 2.8 k W resistor and any external resistor to GND on this pin to determine the peak current limit. If this pin is tied to Vcc or left floating, the typical peak current limit will be 0.7 A. 5 Vstr This pin connects directly to the rectified AC line voltage source. At start up the internal switch sup- plies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the Vcc reaches 12 V, the internal switch is opened. 6, 7, 8 Drain The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 650 V. Minimizing the length of the trace connecting these pins to the transformer will decrease leakage inductance. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C, unless otherwise specified) Symbol Parameter Ratings Unit VDRAIN Drain Pin Voltage 650 V VSTR Vstr Pin Voltage 650 V VDG Drain−Gate Voltage 650 V VGS Gate−Source Voltage ±20 V IDM Drain Current Pulsed (Note 4) 1.5 A ID Continuous Drain Current (TC = 25°C) 0.7 A Continuous Drain Current (TC = 100°C) 0.32 EAS Single Pulsed Avalanche Energy (Note 5) 10 mJ VCC Supply Voltage 20 V VFB Feedback Voltage Range −0.3 to VCC V PD Total Power Dissipation 1.40 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature −25 to 85 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. Repetitive rating: Pulse width is limited by maximum junction temperature 5. L = 24 mH, TJ = 25°C THERMAL CHARACTERISTICS (Ta = 25 °C, unless otherwise specified) Symbol Parameter Ratings Unit 8DIP qJA Junction−to−Ambient Thermal (Note 6) 88.84 °C/W qJC Junction−to−Case Thermal (Note 7) 13.94 °C/W NOTE: All items are tested with the standards JESD 51−2 and 51−10 (DIP). 6. Free standing with no heatsink; without copper clad Measurement condition: Just before junction temperature TJ enters into OTP 7. Measured on the DRAIN pin close to plastic interface |
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