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DH321 Datasheet(PDF) 8 Page - ON Semiconductor |
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DH321 Datasheet(HTML) 8 Page - ON Semiconductor |
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8 / 16 page ![]() FSDH321, FSDL321 www.onsemi.com 8 FUNCTIONAL DESCRIPTION Startup In previous generations of Power Switches the Vstr pin had an external resistor to the DC input voltage line. In this generation the startup resistor is replaced by an internal high voltage current source and a switch that shuts off when 15 ms goes by after the supply voltage, Vcc, gets above 12 V. The source turns back on if Vcc drops below 8 V. Figure 14. High Voltage Current Source Vin, dc ISTR Vstr Vcc J−FET ICH Vcc < 8 V UVLO on 15 ms after Vcc ≥ 12 V UVLO off Feedback Control The FSDx321 employs current mode control, as shown in Figure 15. An opto−coupler (such as the H11A817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor plus an offset voltage makes it possible to control the switching duty cycle. When the KA431 reference pin voltage exceeds the internal reference voltage of 2.5 V, the optocoupler LED current increases, the feedback voltage Vfb is pulled down and it reduces the duty cycle. This event typically happens when the input voltage is increased or the output load is decreased. Figure 15. Pulse Width Modulation (PWM) Circuit Vo 431 Vfb 3 CFB + − VFB 5 uA 0.9 mA Vcc Vcc OSC VSD OLP D1 D2 2.5R R − + Gate driver + − VFB,in Leading Edge Blanking (LEB) At the instant the internal SENSEFET is turned on, the primary side capacitance and secondary side rectifier diode reverse recovery typically cause a high current spike through the SENSEFET. Excessive voltage across the Rsense resistor leads to incorrect feedback operation in the current mode PWM control. To counter this effect, the power switch employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (tLEB) after the SENSEFET is turned on. Protection Circuits The power switch has several protective functions such as over load protection (OLP), over voltage protection (OVP), abnormal over current protection (AOCP), under voltage lock out (UVLO) and thermal shutdown (TSD). Because these protection circuits are fully integrated inside the IC without external components, the reliability is improved without increasing cost. Once a fault condition occurs, switching is terminated and the SENSEFET remains off. This causes Vcc to fall. When Vcc reaches the UVLO stop voltage VSTOP (8 V), the protection is reset and the internal high voltage current source charges the Vcc capacitor via the Vstr pin. When Vcc reaches the UVLO start voltage VSTART (12 V), the power switch resumes its normal operation. In this manner, the auto−restart can alternately enable and disable the switching of the power SENSEFET until the fault condition is eliminated. Over Load Protection (OLP) Overload is defined as the load current exceeding a pre−set level due to an unexpected event. In this situation, the protection circuit should be activated in order to protect the SMPS. However, even when the SMPS is operating normally, the over load protection (OLP) circuit can be activated during the load transition. In order to avoid this undesired operation, the OLP circuit is designed to be activated after a specified time to determine whether it is a transient situation or an overload situation. In conjunction with the Ipk current limit pin (if used) the current mode feedback path would limit the current in the SENSEFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (Vo) decreases below its rating voltage. This reduces the current through the opto−coupler LED, which also reduces the opto−coupler transistor current, thus increasing the feedback voltage (VFB). If VFB exceeds 3 V, the feedback input diode is blocked and the 5 mA current source (IDELAY) starts to charge Cfb slowly up to Vcc. In this condition, VFB increases until it reaches 6 V, when the switching operation is terminated as shown in Figure 16. The shutdown delay time is the time required to charge Cfb from 3 V to 6 V with 5 mA current source. |
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