 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
S71GS256 Datasheet(PDF) 165 Page - SPANSION |
|
|
|||||||||||||||||||||||||||||
S71GS256 Datasheet(HTML) 165 Page - SPANSION |
|
|
165 / 195 page  October 4, 2004 cellRAM_00_A0 CellularRAM Type 2 165 Ad vance Info rmat i o n Notes: 1. Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. If CE# goes HIGH, it must remain HIGH for at least 5ns (tCBPH) to schedule the appropriate internal refresh operation. See “How Extended Timings Impact CellularRAM™ Operation” for restrictions on the maximum CE# LOW time (tCEM). Figure 58. Burst READ Followed by Asynchronous WRITE Using ADV# Valid Address tSP tHD tOHZ High-Z High-Z VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL VOH VOL A[22:0] ADV# CE# DQ[15:0] WAIT tHD VIH VIL OE# WE# tCLK VIH VIL CLK tSP tHD (Note 2) tWP tWPH tSP tHD Valid Output Valid Input tCBPH tKOH tACLK Don't Care Undefined Legend: Valid Address tAS VIH VIL LB#/UB# tOLZ tAVS tAVH tCSP tBW tDH tKHTL tDW tSP tHD tHZ tBOE tCEM tAW tCW tVS tVP tVPH tAS tCEW tCEW tHZ READ Burst Identified (WE# = HIGH) High-Z |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
