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LM5155 Datasheet(PDF) 23 Page - Texas Instruments

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Part # LM5155
Description  LM5155x-Q1 2.2-MHz Wide Input Nonsynchronous Boost, SEPIC, Flyback Controller
PDF  51 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM5155 Datasheet(HTML) 23 Page - Texas Instruments

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9.3.11 Maximum Duty Cycle Limit and Minimum Input Supply Voltage
When designing boost converters, the maximum duty cycle should be reviewed at the minimum supply voltage.
The minimum input supply voltage that can achieve the target output voltage is limited by the maximum duty
cycle limit, and it can be estimated as follows.
SUPPLY(MIN)
LOAD
F
MAX
SUPPLY(MAX)
DCR
SUPPLY(MAX)
DS(ON)
S
MAX
V
V
V
1 D
I
R
I
R
R
D
|
u
u
u
u
(15)
where
• ISUPPLY(MAX) = the maximum input current.
• RDCR = the DC resistance of the inductor.
• RDS(ON) = the on-resistance of the MOSFET.
SYNC
MAX1
RT
f
D
1
0.1
f
u
(16)
MAX2
SW
D
1 100ns
f
u
(17)
The minimum input supply voltage can be further decreased by supplying fSYNC which is less than fRT. DMAX is
DMAX1 or DMAX2, whichever is lower.
9.3.12 MOSFET Driver (GATE Pin)
The device provides an N-channel MOSFET driver that can source or sink a peak current of 1.5 A. The peak
sourcing current is larger when supplying an external VCC that is higher than the 6.75-V VCC regulation target.
During start-up, especially when the input voltage range is below the VCC regulation target, the VCC voltage
must be sufficient to completely enhance the MOSFET. If the MOSFET drive voltage is lower than the MOSFET
gate plateau voltage during start-up, the boost converter may not start up properly and it can stick at the
maximum duty cycle in a high power dissipation state. This condition can be avoided by selecting a lower
threshold N-channel MOSFET switch and setting the VSUPPLY(ON) greater than 6 to 7 V. Since the internal VCC
regulator has a limited sourcing capability, the MOSFET gate charge should satisfy the following inequality.
G @ VCC
SW
Q
f
35mA
u
(18)
An internal 1-MΩ resistor is connected between GATE and PGND to prevent a false turnon during shutdown. In
boost topology, a switch node dV/dT must be limited during the 65-µs internal start-up delay to avoid a false
turnon, which is caused by the coupling through CDG parasitic capacitance of the MOSFET.
9.3.13 Overvoltage Protection (OVP)
The device has OVP for the output voltage. OVP is sensed at the FB pin. If the voltage at the FB pin rises above
the overvoltage threshold (VOVTH), OVP is triggered and switching stops. During OVP, the internal error amplifier
is operational, but the maximum source and sink capability is decreased to 40 µA.
9.3.14 Thermal Shutdown (TSD)
An internal thermal shutdown turns off the VCC regulator, disables switching, and pulls down the SS when the
junction temperature exceeds the thermal shutdown threshold (TTSD). After the temperature is decreased by
15°C, the VCC regulator is enabled again and the device performs a soft start.
www.ti.com
LM5155-Q1, LM51551-Q1
SNVSAY4E – AUGUST 2018 – REVISED JANUARY 2021
Copyright © 2021 Texas Instruments Incorporated
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Product Folder Links: LM5155-Q1 LM51551-Q1



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